Effect of band mismatch on minority carrier transport in heterojunction solar cells

R. S. Crandall, J. V. Li

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

By using transient-capacitance techniques we probe the mechanism of hole transport in amorphous/crystalline silicon heterojunction solar cells. The devices are formed by depositing undoped amorphous silicon followed by p-type amorphous silicon on n-type crystalline silicon wafers. The capacitance transients indicate that hole transport from p-type amorphous silicon to n-type crystalline silicon is hindered by hole accumulation in the depletion region of the crystalline silicon. The results are explained with a model based on electrostatic repulsion owing to hole build-up at the crystalline/amorphous interface. We apply these results to other heterojunction solar cells.

Original languageEnglish
Pages (from-to)13-16
Number of pages4
JournalSolar Energy Materials and Solar Cells
Volume129
DOIs
Publication statusPublished - 2014 Oct

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films

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