In the semiconductor metallization process, the superior gap-fill capability of copper (Cu) electroplating is mainly due to external additives, such as bis-(3-sodiumsulfopropyl disulfide) (SPS), which is used as an accelerator. This study demonstrates that the byproducts of SPS induced Cu defects after a chemical-mechanical-polishing (CMP) process. In conventional cyclic-voltammetric-stripping analysis, the byproducts generated from organic additives are very difficult to quantify. In this study, the authors used mass-spectrum analysis to quantify SPS byproducts and found that the SPS byproduct, 1,3-propanedisulfonic acid, correlated with the formation of Cu defects because it influenced the properties of electroplated Cu films and the chemical corrosion rate, then induced defects after the CMP process.
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 2008 Feb 8|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering