Effect of bis-(3-sodiumsulfopropyl disulfide) byproducts on copper defects after chemical mechanical polishing

Chi Cheng Hung, Wen Hsi Lee, Shao Yu Hu, Shih Chieh Chang, Kei Wei Chen, Ying Lang Wang

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

In the semiconductor metallization process, the superior gap-fill capability of copper (Cu) electroplating is mainly due to external additives, such as bis-(3-sodiumsulfopropyl disulfide) (SPS), which is used as an accelerator. This study demonstrates that the byproducts of SPS induced Cu defects after a chemical-mechanical-polishing (CMP) process. In conventional cyclic-voltammetric-stripping analysis, the byproducts generated from organic additives are very difficult to quantify. In this study, the authors used mass-spectrum analysis to quantify SPS byproducts and found that the SPS byproduct, 1,3-propanedisulfonic acid, correlated with the formation of Cu defects because it influenced the properties of electroplated Cu films and the chemical corrosion rate, then induced defects after the CMP process.

Original languageEnglish
Pages (from-to)255-259
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume26
Issue number1
DOIs
Publication statusPublished - 2008 Feb 8

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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