TY - JOUR
T1 - Effect of bismuth addition on sintering behavior and microwave dielectric properties of zinc titanate ceramics
AU - Chen, Hsun Chin
AU - Weng, Ming Hang
AU - Horng, Jui Hong
AU - Houng, Mau Phon
AU - Wang, Yeong Her
N1 - Funding Information:
This work was supported by the National Science Council of the Republic of China under Grant No. NSC-92-2215-E006018.
PY - 2005/1
Y1 - 2005/1
N2 - The influences of Bi2O3 addition on the sintering behavior and microwave dielectric properties of ZnO-TiO2 ceramics were investigated. ZnO-TiO2 ceramics were prepared with conventional solid-state method and sintered at temperatures from 950°C to 1,100°C. The sintering temperature of ZnO-TiO2 ceramics with Bi 2O3 addition could be effectively reduced to 1,000°C due to the liquid-phase effects resulting from the additives. A proper amount of Bi2O3 addition could effectively improve the densification and dielectric properties of ZnO-TiO2 ceramics. The temperature coefficient of resonant frequency could be controlled by varying the sintering temperature and lead to a zero τf value. At 1,000°C, 1ZnO-1TiO2 ceramics with 1 wt.% addition gave better microwave dielectric properties εr of 29.3, a Q × f value of 22,000 GHz at 8.36 GHz, and a τf value of +17.4 ppm/°C.
AB - The influences of Bi2O3 addition on the sintering behavior and microwave dielectric properties of ZnO-TiO2 ceramics were investigated. ZnO-TiO2 ceramics were prepared with conventional solid-state method and sintered at temperatures from 950°C to 1,100°C. The sintering temperature of ZnO-TiO2 ceramics with Bi 2O3 addition could be effectively reduced to 1,000°C due to the liquid-phase effects resulting from the additives. A proper amount of Bi2O3 addition could effectively improve the densification and dielectric properties of ZnO-TiO2 ceramics. The temperature coefficient of resonant frequency could be controlled by varying the sintering temperature and lead to a zero τf value. At 1,000°C, 1ZnO-1TiO2 ceramics with 1 wt.% addition gave better microwave dielectric properties εr of 29.3, a Q × f value of 22,000 GHz at 8.36 GHz, and a τf value of +17.4 ppm/°C.
UR - https://www.scopus.com/pages/publications/13244295773
UR - https://www.scopus.com/pages/publications/13244295773#tab=citedBy
U2 - 10.1007/s11664-005-0188-0
DO - 10.1007/s11664-005-0188-0
M3 - Article
AN - SCOPUS:13244295773
SN - 0361-5235
VL - 34
SP - 119
EP - 124
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
IS - 1
ER -