Effect of buffer layers on electrical, optical and structural properties of AlGaN/GaN heterostructures grown on Si

Chin An Chang, Shao Tang Lien, Chen Han Liu, Chaun Feng Shih, Nie Chuan Chen, Pen Hsiu Chang, Hien Chiu Peng, Tze Yu Tang, Wei Chieh Lien, Yu Hsiang Wu, Kun Ta Wu, Ji Wei Chen, Chi Te Liang, Yang Fang Chen, Tong Uan Lu, Tai Yuan Lin

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

AlGaN/GaN heterostructures with different buffer layers were grown on Si substrates by metal-organic vapor phase epitaxy (MOVPE). The electrical property of the two-dimensional electron gas (2DEG) formed at the AlGaN/GaN interface was correlated with both the optical and structural quality of the GaN layer involved. A combination of two sets of high-temperature and low-temperature AlN and an ultrashort exposure to SiH4 showed the best-grown GaN, followed by a similar buffer layer without the SiH4 exposure, and a graded AlGaN buffer layer only. The enhancements in both electron mobility and 2DEG density were also accompanied by a reduced donor-acceptor pair (DAP) emission and a reduced dislocation density in the top GaN grown.

Original languageEnglish
Pages (from-to)2516-2518
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number4 A
DOIs
Publication statusPublished - 2006 Apr 7

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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