Effect of buffer layers on electrical, optical and structural properties of AlGaN/GaN heterostructures grown on Si

Chin An Chang; Shao Tang Lien; Chen Han Liu; Chaun Feng Shih; Nie Chuan Chen; Pen Hsiu Chang; Hien Chiu Peng; Tze Yu Tang; Wei Chieh Lien; Yu Hsiang Wu; Kun Ta Wu; Ji Wei Chen; Chi Te Liang; Yang Fang Chen; Tong Uan Lu; Tai Yuan Lin

doi:10.1143/JJAP.45.2516

Effect of buffer layers on electrical, optical and structural properties of AlGaN/GaN heterostructures grown on Si

Chin An Chang, Shao Tang Lien, Chen Han Liu, Chaun Feng Shih, Nie Chuan Chen, Pen Hsiu Chang, Hien Chiu Peng, Tze Yu Tang, Wei Chieh Lien, Yu Hsiang Wu, Kun Ta Wu, Ji Wei Chen, Chi Te Liang, Yang Fang Chen, Tong Uan Lu, Tai Yuan Lin

Doctoral Degree Program on Nano-Integrated-Circuit Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

AlGaN/GaN heterostructures with different buffer layers were grown on Si substrates by metal-organic vapor phase epitaxy (MOVPE). The electrical property of the two-dimensional electron gas (2DEG) formed at the AlGaN/GaN interface was correlated with both the optical and structural quality of the GaN layer involved. A combination of two sets of high-temperature and low-temperature AlN and an ultrashort exposure to SiH₄ showed the best-grown GaN, followed by a similar buffer layer without the SiH₄ exposure, and a graded AlGaN buffer layer only. The enhancements in both electron mobility and 2DEG density were also accompanied by a reduced donor-acceptor pair (DAP) emission and a reduced dislocation density in the top GaN grown.

Original language	English
Pages (from-to)	2516-2518
Number of pages	3
Journal	Japanese Journal of Applied Physics
Volume	45
Issue number	4 A
DOIs	https://doi.org/10.1143/JJAP.45.2516
Publication status	Published - 2006 Apr 7

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

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Chang, C. A., Lien, S. T., Liu, C. H., Shih, C. F., Chen, N. C., Chang, P. H., Peng, H. C., Tang, T. Y., Lien, W. C., Wu, Y. H., Wu, K. T., Chen, J. W., Liang, C. T., Chen, Y. F., Lu, T. U., & Lin, T. Y. (2006). Effect of buffer layers on electrical, optical and structural properties of AlGaN/GaN heterostructures grown on Si. Japanese Journal of Applied Physics, 45(4 A), 2516-2518. https://doi.org/10.1143/JJAP.45.2516

@article{30cc41bcae75433788741c884734d84c,

title = "Effect of buffer layers on electrical, optical and structural properties of AlGaN/GaN heterostructures grown on Si",

abstract = "AlGaN/GaN heterostructures with different buffer layers were grown on Si substrates by metal-organic vapor phase epitaxy (MOVPE). The electrical property of the two-dimensional electron gas (2DEG) formed at the AlGaN/GaN interface was correlated with both the optical and structural quality of the GaN layer involved. A combination of two sets of high-temperature and low-temperature AlN and an ultrashort exposure to SiH4 showed the best-grown GaN, followed by a similar buffer layer without the SiH4 exposure, and a graded AlGaN buffer layer only. The enhancements in both electron mobility and 2DEG density were also accompanied by a reduced donor-acceptor pair (DAP) emission and a reduced dislocation density in the top GaN grown.",

author = "Chang, {Chin An} and Lien, {Shao Tang} and Liu, {Chen Han} and Shih, {Chaun Feng} and Chen, {Nie Chuan} and Chang, {Pen Hsiu} and Peng, {Hien Chiu} and Tang, {Tze Yu} and Lien, {Wei Chieh} and Wu, {Yu Hsiang} and Wu, {Kun Ta} and Chen, {Ji Wei} and Liang, {Chi Te} and Chen, {Yang Fang} and Lu, {Tong Uan} and Lin, {Tai Yuan}",

year = "2006",

month = apr,

day = "7",

doi = "10.1143/JJAP.45.2516",

language = "English",

volume = "45",

pages = "2516--2518",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

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Chang, CA, Lien, ST, Liu, CH, Shih, CF, Chen, NC, Chang, PH, Peng, HC, Tang, TY, Lien, WC, Wu, YH, Wu, KT, Chen, JW, Liang, CT, Chen, YF, Lu, TU & Lin, TY 2006, 'Effect of buffer layers on electrical, optical and structural properties of AlGaN/GaN heterostructures grown on Si', Japanese Journal of Applied Physics, vol. 45, no. 4 A, pp. 2516-2518. https://doi.org/10.1143/JJAP.45.2516

TY - JOUR

T1 - Effect of buffer layers on electrical, optical and structural properties of AlGaN/GaN heterostructures grown on Si

AU - Chang, Chin An

AU - Lien, Shao Tang

AU - Liu, Chen Han

AU - Shih, Chaun Feng

AU - Chen, Nie Chuan

AU - Chang, Pen Hsiu

AU - Peng, Hien Chiu

AU - Tang, Tze Yu

AU - Lien, Wei Chieh

AU - Wu, Yu Hsiang

AU - Wu, Kun Ta

AU - Chen, Ji Wei

AU - Liang, Chi Te

AU - Chen, Yang Fang

AU - Lu, Tong Uan

AU - Lin, Tai Yuan

PY - 2006/4/7

Y1 - 2006/4/7

N2 - AlGaN/GaN heterostructures with different buffer layers were grown on Si substrates by metal-organic vapor phase epitaxy (MOVPE). The electrical property of the two-dimensional electron gas (2DEG) formed at the AlGaN/GaN interface was correlated with both the optical and structural quality of the GaN layer involved. A combination of two sets of high-temperature and low-temperature AlN and an ultrashort exposure to SiH4 showed the best-grown GaN, followed by a similar buffer layer without the SiH4 exposure, and a graded AlGaN buffer layer only. The enhancements in both electron mobility and 2DEG density were also accompanied by a reduced donor-acceptor pair (DAP) emission and a reduced dislocation density in the top GaN grown.

AB - AlGaN/GaN heterostructures with different buffer layers were grown on Si substrates by metal-organic vapor phase epitaxy (MOVPE). The electrical property of the two-dimensional electron gas (2DEG) formed at the AlGaN/GaN interface was correlated with both the optical and structural quality of the GaN layer involved. A combination of two sets of high-temperature and low-temperature AlN and an ultrashort exposure to SiH4 showed the best-grown GaN, followed by a similar buffer layer without the SiH4 exposure, and a graded AlGaN buffer layer only. The enhancements in both electron mobility and 2DEG density were also accompanied by a reduced donor-acceptor pair (DAP) emission and a reduced dislocation density in the top GaN grown.

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JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 4 A

ER -

Effect of buffer layers on electrical, optical and structural properties of AlGaN/GaN heterostructures grown on Si

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