AlGaN/GaN heterostructures with different buffer layers were grown on Si substrates by metal-organic vapor phase epitaxy (MOVPE). The electrical property of the two-dimensional electron gas (2DEG) formed at the AlGaN/GaN interface was correlated with both the optical and structural quality of the GaN layer involved. A combination of two sets of high-temperature and low-temperature AlN and an ultrashort exposure to SiH4 showed the best-grown GaN, followed by a similar buffer layer without the SiH4 exposure, and a graded AlGaN buffer layer only. The enhancements in both electron mobility and 2DEG density were also accompanied by a reduced donor-acceptor pair (DAP) emission and a reduced dislocation density in the top GaN grown.
|Number of pages||3|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||4 A|
|Publication status||Published - 2006 Apr 7|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)