Effect of carbon sources on silicon carbon nitride films growth in an electron cyclotron resonance plasma chemical vapor deposition reactor

J. J. Wu, K. H. Chen, C. Y. Wen, L. C. Chen, X. J. Guo, H. J. Lo, S. T. Lin, Y. C. Yu, C. W. Wang, E. K. Lin

Research output: Contribution to journalConference articlepeer-review

13 Citations (Scopus)

Abstract

The effect of carbon source on SiCN film growth was studied in an electron cyclotron resonance plasma chemical vapor deposition reactor. The growth characteristics of CH4, C2H2 and CH3NH2 were examined with and without H2 addition during growth. The results indicated that SiCN films were deposited successfully using CH4 with H2 addition as well as using CH3NH2 both with and without H2 addition. (Si; C) and N composition ratios of the films thus deposited were around 0.75. Carbon was hardly incorporated into the films when deposited using C2H2 as the source gas regardless of H2 addition during growth. Among the three source gas studied, CH3NH2 was the most effective for the SiCN films growth. Spectroscopic study of the gas phase species during growth and discussion on the growth phenomena are presented in this paper. (C) 2000 Elsevier Science S.A. All rights reserved.

Original languageEnglish
Pages (from-to)556-561
Number of pages6
JournalDiamond and Related Materials
Volume9
Issue number3-6
DOIs
Publication statusPublished - 2000 Apr
Event10th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide - Prague, Czech Republic
Duration: 1999 Sep 121999 Sep 17

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

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