Abstract
The effects of different coplanar ground-signal-ground (GSG) probe pads on the noise figure characteristics of submicron MOSFETs are presented. Devices with top-level metal as probe pads shielded by grounded bottom-level metal possess the most appropriate probe pad structure for characterizing the noise performance of MOSFETs. Equivalent circuits of the probe pads are used to explain the different noise behaviours.
Original language | English |
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Pages (from-to) | 1280-1281 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 36 |
Issue number | 15 |
DOIs | |
Publication status | Published - 2000 Jul |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering