Effect of crystal orientation and doping on the activation energy for GaAs oxide growth by liquid phase method

Hwei Heng Wang, Dei Wei Chou, Jau Yi Wu, Yeong Her Wang, Mau Phon Houng

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

We have investigated the oxide growth kinetics of near-room-temperature liquid phase chemical enhanced oxidation on differently oriented and doped GaAs substrates. Oxidation reactions have been studied by analyzing their activation energies and have been found to depend on the bond configuration of crystal planes. Experimental results indicate that the activation energies are independent of the doping of GaAs. The oxidation rates are dopant selective (n- :p+-GaAs∼4:1 at 30°C under illumination) and sensitive to illumination (without:with illumination∼1:25 at 30°C for a n+ -doped GaAs). In the oxidation reactions, photogenerated holes are found to play an important role. Finally, we have proposed a mechanism based on the band bending and the carrier transport near the oxide-GaAs interface to interpret the experimental observations.

Original languageEnglish
Pages (from-to)2629-2633
Number of pages5
JournalJournal of Applied Physics
Volume87
Issue number5
DOIs
Publication statusPublished - 2000 Mar

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Effect of crystal orientation and doping on the activation energy for GaAs oxide growth by liquid phase method'. Together they form a unique fingerprint.

Cite this