@inproceedings{e19565199987411d96543c596bf0c8f4,
title = "Effect of Cu drift on dielectric breakdown for porous low dielectric constant film under static and dynamic stress",
abstract = "Cu-ion-migration-induced the porous low-k dielectric breakdown was studied in alternating polarity-bias conditions using a metal-insulator-metal (MIM) structure with Cu as a top electrode. The experimental results indicated that Cu ions migrate into a dielectric film under a positive polarity stress, leading to a shorter time to failure (TTF). Additionally, the TTF obtained in the alternating-polarity test increased with decreasing the stressing frequency, indicating that the backward migration of Cu ions during the reverse-bias stress. When the frequency is decreased to 10-2 Hz, the measured TTFs were higher as compared to a direct-current (DC) stress condition. Under Cu-ion-recovery case, the electric-field acceleration factor for porous low-k dielectric film breakdown tends to increase. Meanwhile, this Cu backward migration effect is effective as the stressing time in the negative polarity is larger than 0.1 s.",
author = "Cheng, {Yi Lung} and Huang, {Yao Liang} and Sun, {Chung Ren} and Lee, {Wen Hsi} and Chen, {Giin Shan} and Fang, {Jau Shiung}",
note = "Publisher Copyright: {\textcopyright}The Electrochemical Society.; Symposium on Dielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufacturing - 229th ECS Meeting ; Conference date: 29-05-2016 Through 02-06-2016",
year = "2016",
doi = "10.1149/07202.0241ecst",
language = "English",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "2",
pages = "241--252",
editor = "D. Misra and D. Bauza and Z. Chen and Sundaram, {K. B.} and Obeng, {Y. S.} and T. Chikyow and H. Iwai",
booktitle = "Dielectrics for Nanosystems 7",
edition = "2",
}