Effect of Cu drift on dielectric breakdown for porous low dielectric constant film under static and dynamic stress

Yi Lung Cheng, Yao Liang Huang, Chung Ren Sun, Wen Hsi Lee, Giin Shan Chen, Jau Shiung Fang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Cu-ion-migration-induced the porous low-k dielectric breakdown was studied in alternating polarity-bias conditions using a metal-insulator-metal (MIM) structure with Cu as a top electrode. The experimental results indicated that Cu ions migrate into a dielectric film under a positive polarity stress, leading to a shorter time to failure (TTF). Additionally, the TTF obtained in the alternating-polarity test increased with decreasing the stressing frequency, indicating that the backward migration of Cu ions during the reverse-bias stress. When the frequency is decreased to 10-2 Hz, the measured TTFs were higher as compared to a direct-current (DC) stress condition. Under Cu-ion-recovery case, the electric-field acceleration factor for porous low-k dielectric film breakdown tends to increase. Meanwhile, this Cu backward migration effect is effective as the stressing time in the negative polarity is larger than 0.1 s.

Original languageEnglish
Title of host publicationDielectrics for Nanosystems 7
Subtitle of host publicationMaterials Science, Processing, Reliability, and Manufacturing
EditorsY. S. Obeng, H. Iwai, Z. Chen, D. Bauza, K. B. Sundaram, T. Chikyow, D. Misra
PublisherElectrochemical Society Inc.
Pages241-252
Number of pages12
Edition2
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2016 Jan 1
EventSymposium on Dielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufacturing - 229th ECS Meeting - San Diego, United States
Duration: 2016 May 292016 Jun 2

Publication series

NameECS Transactions
Number2
Volume72
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherSymposium on Dielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufacturing - 229th ECS Meeting
CountryUnited States
CitySan Diego
Period16-05-2916-06-02

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Cheng, Y. L., Huang, Y. L., Sun, C. R., Lee, W. H., Chen, G. S., & Fang, J. S. (2016). Effect of Cu drift on dielectric breakdown for porous low dielectric constant film under static and dynamic stress. In Y. S. Obeng, H. Iwai, Z. Chen, D. Bauza, K. B. Sundaram, T. Chikyow, & D. Misra (Eds.), Dielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufacturing (2 ed., pp. 241-252). (ECS Transactions; Vol. 72, No. 2). Electrochemical Society Inc.. https://doi.org/10.1149/07202.0241ecst