Effect of Cu-Ion concentration in concentrated H3 PO4 electrolyte on Cu electrochemical mechanical planarization

Te Ming Kung, Chuan Pu Liu, Shih Chieh Chang, Kei Wei Chen, Ying Lang Wang

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The influence of Cu-ion concentration in a concentrated H3 PO4 electrolyte on the Cu removal rate and planarization efficiency (PE) of electrochemical mechanical planarization (ECMP) was investigated. With increasing Cu-ion concentration in the electrolyte, results show that the Cu removal rate significantly decreased because more Cu ions in the electrolyte facilitated the formation of a surface passive film. Electrochemical analysis shows that the current density decreased from 91 to 62 mA/ cm2 when the Cu-ion concentration was increased from 35.8 to 158.6 mM. In a low Cu-ion concentration electrolyte, Cu (OH)2 is dominant, while in a high Cu-ion concentration electrolyte, CuO predominates. A high Cu-ion concentration in the electrolyte during ECMP promotes the formation of CuO, which retards Cu-ion diffusion from the Cu surface to the electrolyte solution, resulting in a decrease in the Cu removal rate. The intensity ratio of CuO/ [Cu (OH) 2 +CuO] in the Cu 2p3/2 X-ray photoelectron spectroscopy spectrum increased from 22.1 to 85.6% when the Cu-ion concentration was increased. The effect of Cu-ion concentration on the microscale PE of Cu ECMP is discussed.

Original languageEnglish
Pages (from-to)H763-H770
JournalJournal of the Electrochemical Society
Volume157
Issue number7
DOIs
Publication statusPublished - 2010 Jun 10

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ion concentration
Electrolytes
electrolytes
Ions
microbalances
ions
photoelectron spectroscopy
current density
Current density
X ray photoelectron spectroscopy

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

Kung, Te Ming ; Liu, Chuan Pu ; Chang, Shih Chieh ; Chen, Kei Wei ; Wang, Ying Lang. / Effect of Cu-Ion concentration in concentrated H3 PO4 electrolyte on Cu electrochemical mechanical planarization. In: Journal of the Electrochemical Society. 2010 ; Vol. 157, No. 7. pp. H763-H770.
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abstract = "The influence of Cu-ion concentration in a concentrated H3 PO4 electrolyte on the Cu removal rate and planarization efficiency (PE) of electrochemical mechanical planarization (ECMP) was investigated. With increasing Cu-ion concentration in the electrolyte, results show that the Cu removal rate significantly decreased because more Cu ions in the electrolyte facilitated the formation of a surface passive film. Electrochemical analysis shows that the current density decreased from 91 to 62 mA/ cm2 when the Cu-ion concentration was increased from 35.8 to 158.6 mM. In a low Cu-ion concentration electrolyte, Cu (OH)2 is dominant, while in a high Cu-ion concentration electrolyte, CuO predominates. A high Cu-ion concentration in the electrolyte during ECMP promotes the formation of CuO, which retards Cu-ion diffusion from the Cu surface to the electrolyte solution, resulting in a decrease in the Cu removal rate. The intensity ratio of CuO/ [Cu (OH) 2 +CuO] in the Cu 2p3/2 X-ray photoelectron spectroscopy spectrum increased from 22.1 to 85.6{\%} when the Cu-ion concentration was increased. The effect of Cu-ion concentration on the microscale PE of Cu ECMP is discussed.",
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Effect of Cu-Ion concentration in concentrated H3 PO4 electrolyte on Cu electrochemical mechanical planarization. / Kung, Te Ming; Liu, Chuan Pu; Chang, Shih Chieh; Chen, Kei Wei; Wang, Ying Lang.

In: Journal of the Electrochemical Society, Vol. 157, No. 7, 10.06.2010, p. H763-H770.

Research output: Contribution to journalArticle

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AU - Wang, Ying Lang

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N2 - The influence of Cu-ion concentration in a concentrated H3 PO4 electrolyte on the Cu removal rate and planarization efficiency (PE) of electrochemical mechanical planarization (ECMP) was investigated. With increasing Cu-ion concentration in the electrolyte, results show that the Cu removal rate significantly decreased because more Cu ions in the electrolyte facilitated the formation of a surface passive film. Electrochemical analysis shows that the current density decreased from 91 to 62 mA/ cm2 when the Cu-ion concentration was increased from 35.8 to 158.6 mM. In a low Cu-ion concentration electrolyte, Cu (OH)2 is dominant, while in a high Cu-ion concentration electrolyte, CuO predominates. A high Cu-ion concentration in the electrolyte during ECMP promotes the formation of CuO, which retards Cu-ion diffusion from the Cu surface to the electrolyte solution, resulting in a decrease in the Cu removal rate. The intensity ratio of CuO/ [Cu (OH) 2 +CuO] in the Cu 2p3/2 X-ray photoelectron spectroscopy spectrum increased from 22.1 to 85.6% when the Cu-ion concentration was increased. The effect of Cu-ion concentration on the microscale PE of Cu ECMP is discussed.

AB - The influence of Cu-ion concentration in a concentrated H3 PO4 electrolyte on the Cu removal rate and planarization efficiency (PE) of electrochemical mechanical planarization (ECMP) was investigated. With increasing Cu-ion concentration in the electrolyte, results show that the Cu removal rate significantly decreased because more Cu ions in the electrolyte facilitated the formation of a surface passive film. Electrochemical analysis shows that the current density decreased from 91 to 62 mA/ cm2 when the Cu-ion concentration was increased from 35.8 to 158.6 mM. In a low Cu-ion concentration electrolyte, Cu (OH)2 is dominant, while in a high Cu-ion concentration electrolyte, CuO predominates. A high Cu-ion concentration in the electrolyte during ECMP promotes the formation of CuO, which retards Cu-ion diffusion from the Cu surface to the electrolyte solution, resulting in a decrease in the Cu removal rate. The intensity ratio of CuO/ [Cu (OH) 2 +CuO] in the Cu 2p3/2 X-ray photoelectron spectroscopy spectrum increased from 22.1 to 85.6% when the Cu-ion concentration was increased. The effect of Cu-ion concentration on the microscale PE of Cu ECMP is discussed.

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