The microwave dielectric properties and microstructures of CuO-doped Nd(Zn1/2Ti1/2)O3 ceramics prepared by the conventional solid-state route were investigated. The prepared Nd(Zn1/2Ti1/2)O3 exhibits a mixture of Zn and Ti showing 1:1 order in the B-site. As an appropriate sintering aid, not only did CuO lower the sintering temperature, it could effectively hold back the evaporation of Zn in the Nd(Zn1/2Ti1/2)O3. Moreover, CuO only resided in boundaries, which was confirmed by EDX analysis. The measured lattice parameters of CuO-doped Nd(Zn1/2Ti1/2)O3 (a = 5.4652 ± 0.0005 Ǻ, b = 5.6399 ± 0.0007 Ǻ, c = 7.7797 ± 0.0008 Ǻ and β = 90.01 ± 0.01°) retained identical to that of the pure Nd(Zn1/2Ti1/2)O3 in all cases. In comparison with the pure Nd(Zn1/2Ti1/2)O3 ceramics, specimen with 1 wt.% CuO addition possesses a compatible combination of dielectric properties with a εr of 30.68, a Q × f of 158,000 GHz (at 8 GHz) and a τf of - 45 ppm/°C at 1270 °C. It also indicated a 60 °C lowering in the sintering temperature. The proposed dielectrics can be a very promising candidate material for microwave or millimeter wave applications requiring extremely low dielectric loss.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering