Effect of CuO addition to Nd(Zn1/2Ti1/2)O3 ceramics on sintering behavior and microwave dielectric properties

Cheng-Liang Huang, Wen Ruei Yang

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

The microwave dielectric properties and microstructures of CuO-doped Nd(Zn1/2Ti1/2)O3 ceramics prepared by the conventional solid-state route were investigated. The prepared Nd(Zn1/2Ti1/2)O3 exhibits a mixture of Zn and Ti showing 1:1 order in the B-site. As an appropriate sintering aid, not only did CuO lower the sintering temperature, it could effectively hold back the evaporation of Zn in the Nd(Zn1/2Ti1/2)O3. Moreover, CuO only resided in boundaries, which was confirmed by EDX analysis. The measured lattice parameters of CuO-doped Nd(Zn1/2Ti1/2)O3 (a = 5.4652 ± 0.0005 Ǻ, b = 5.6399 ± 0.0007 Ǻ, c = 7.7797 ± 0.0008 Ǻ and β = 90.01 ± 0.01°) retained identical to that of the pure Nd(Zn1/2Ti1/2)O3 in all cases. In comparison with the pure Nd(Zn1/2Ti1/2)O3 ceramics, specimen with 1 wt.% CuO addition possesses a compatible combination of dielectric properties with a εr of 30.68, a Q × f of 158,000 GHz (at 8 GHz) and a τf of - 45 ppm/°C at 1270 °C. It also indicated a 60 °C lowering in the sintering temperature. The proposed dielectrics can be a very promising candidate material for microwave or millimeter wave applications requiring extremely low dielectric loss.

Original languageEnglish
Pages (from-to)103-105
Number of pages3
JournalMaterials Letters
Volume63
Issue number1
DOIs
Publication statusPublished - 2009 Jan 15

Fingerprint

Dielectric properties
dielectric properties
sintering
Sintering
Microwaves
ceramics
microwaves
Dielectric losses
dielectric loss
Millimeter waves
millimeter waves
Lattice constants
Energy dispersive spectroscopy
lattice parameters
Evaporation
routes
evaporation
solid state
Temperature
microstructure

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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title = "Effect of CuO addition to Nd(Zn1/2Ti1/2)O3 ceramics on sintering behavior and microwave dielectric properties",
abstract = "The microwave dielectric properties and microstructures of CuO-doped Nd(Zn1/2Ti1/2)O3 ceramics prepared by the conventional solid-state route were investigated. The prepared Nd(Zn1/2Ti1/2)O3 exhibits a mixture of Zn and Ti showing 1:1 order in the B-site. As an appropriate sintering aid, not only did CuO lower the sintering temperature, it could effectively hold back the evaporation of Zn in the Nd(Zn1/2Ti1/2)O3. Moreover, CuO only resided in boundaries, which was confirmed by EDX analysis. The measured lattice parameters of CuO-doped Nd(Zn1/2Ti1/2)O3 (a = 5.4652 ± 0.0005 Ǻ, b = 5.6399 ± 0.0007 Ǻ, c = 7.7797 ± 0.0008 Ǻ and β = 90.01 ± 0.01°) retained identical to that of the pure Nd(Zn1/2Ti1/2)O3 in all cases. In comparison with the pure Nd(Zn1/2Ti1/2)O3 ceramics, specimen with 1 wt.{\%} CuO addition possesses a compatible combination of dielectric properties with a εr of 30.68, a Q × f of 158,000 GHz (at 8 GHz) and a τf of - 45 ppm/°C at 1270 °C. It also indicated a 60 °C lowering in the sintering temperature. The proposed dielectrics can be a very promising candidate material for microwave or millimeter wave applications requiring extremely low dielectric loss.",
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Effect of CuO addition to Nd(Zn1/2Ti1/2)O3 ceramics on sintering behavior and microwave dielectric properties. / Huang, Cheng-Liang; Yang, Wen Ruei.

In: Materials Letters, Vol. 63, No. 1, 15.01.2009, p. 103-105.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effect of CuO addition to Nd(Zn1/2Ti1/2)O3 ceramics on sintering behavior and microwave dielectric properties

AU - Huang, Cheng-Liang

AU - Yang, Wen Ruei

PY - 2009/1/15

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N2 - The microwave dielectric properties and microstructures of CuO-doped Nd(Zn1/2Ti1/2)O3 ceramics prepared by the conventional solid-state route were investigated. The prepared Nd(Zn1/2Ti1/2)O3 exhibits a mixture of Zn and Ti showing 1:1 order in the B-site. As an appropriate sintering aid, not only did CuO lower the sintering temperature, it could effectively hold back the evaporation of Zn in the Nd(Zn1/2Ti1/2)O3. Moreover, CuO only resided in boundaries, which was confirmed by EDX analysis. The measured lattice parameters of CuO-doped Nd(Zn1/2Ti1/2)O3 (a = 5.4652 ± 0.0005 Ǻ, b = 5.6399 ± 0.0007 Ǻ, c = 7.7797 ± 0.0008 Ǻ and β = 90.01 ± 0.01°) retained identical to that of the pure Nd(Zn1/2Ti1/2)O3 in all cases. In comparison with the pure Nd(Zn1/2Ti1/2)O3 ceramics, specimen with 1 wt.% CuO addition possesses a compatible combination of dielectric properties with a εr of 30.68, a Q × f of 158,000 GHz (at 8 GHz) and a τf of - 45 ppm/°C at 1270 °C. It also indicated a 60 °C lowering in the sintering temperature. The proposed dielectrics can be a very promising candidate material for microwave or millimeter wave applications requiring extremely low dielectric loss.

AB - The microwave dielectric properties and microstructures of CuO-doped Nd(Zn1/2Ti1/2)O3 ceramics prepared by the conventional solid-state route were investigated. The prepared Nd(Zn1/2Ti1/2)O3 exhibits a mixture of Zn and Ti showing 1:1 order in the B-site. As an appropriate sintering aid, not only did CuO lower the sintering temperature, it could effectively hold back the evaporation of Zn in the Nd(Zn1/2Ti1/2)O3. Moreover, CuO only resided in boundaries, which was confirmed by EDX analysis. The measured lattice parameters of CuO-doped Nd(Zn1/2Ti1/2)O3 (a = 5.4652 ± 0.0005 Ǻ, b = 5.6399 ± 0.0007 Ǻ, c = 7.7797 ± 0.0008 Ǻ and β = 90.01 ± 0.01°) retained identical to that of the pure Nd(Zn1/2Ti1/2)O3 in all cases. In comparison with the pure Nd(Zn1/2Ti1/2)O3 ceramics, specimen with 1 wt.% CuO addition possesses a compatible combination of dielectric properties with a εr of 30.68, a Q × f of 158,000 GHz (at 8 GHz) and a τf of - 45 ppm/°C at 1270 °C. It also indicated a 60 °C lowering in the sintering temperature. The proposed dielectrics can be a very promising candidate material for microwave or millimeter wave applications requiring extremely low dielectric loss.

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