In our study, fluorine-doped silicon oxide (SiOF) films were prepared using a mixture of SiH4, N2O, and CF4 in a conventional plasma enhanced chemical vapor deposition system at various deposition temperatures. Deposition behaviors are determined by the deposition temperature. Our results show that for temperatures below 300 °C the process is surface-reaction-limited controlled, but becomes diffusion-limited when the deposition temperature exceeds 300 °C. The surface topography images obtained using an atomic force microscope show that a large amount of free volume space was created in the film with a low temperature deposition. The optical microscope and secondary ion mass spectrometer analyses show that precipitates were produced at the near-surface at the deposition temperature of 150 °C with a higher fluorine concentration of 2.97 at.%. Our results show that the properties of the SiOF film are controlled not only by the free volume space but also by the fluorine concentration. An optimal SiOF film prepared at a temperature of 200 °C shows a low dielectric constant of 3.55, a leakage current of 1.21 × 10- 8 A/cm2 at 1 MV/cm, and a fluorine concentration of 2.5 at.%.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry