Effect of deposition temperature on thermal stability in high-density plasma chemical vapor deposition fluorine-doped silicon dioxide

Y. L. Cheng, Y. L. Wang, H. W. Chen, J. L. Lan, C. P. Liu, S. A. Wu, Y. L. Wu, K. Y. Lo, M. S. Feng

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The thermal stability for SiOF deposited by high density plasma chemical vapor deposition (HDP-CVD), influenced by deposition temperature was analyzed. Secondary-ion mass spectrometer (SIMS) revealed that the fluorine in SiOF films were easily diffused out and turned into the underlayer, which resulted in less thermally stable SiOF films. Patterned wafers with short-loop results demonstrated that low-deposition temperature resulted in F-bubble formation because of greater amount of free fluorine. The results show that the deposition temperature of SiOF films is extremely important for the thermal stability of the film.

Original languageEnglish
Pages (from-to)494-499
Number of pages6
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume22
Issue number3
DOIs
Publication statusPublished - 2004 May 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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