Effect of different partial pressure on Ga-doped ZnO UV photodetectors by RF sputtering

Wan Ju Tung, Chen Chuan Yang, Sheng Po Chang, Ming Hung Hsu, Cheng Hao Chiu, Chih Hung Lin, Tien Hung Cheng, Shoou Jinn Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Ga-doped zinc oxide metal-semiconductor-metal ultraviolet photodetectors were fabricated by radio frequency magnetron sputtering on quartz substrates. The films' Ga content were relatively high to enlarge the bandgap and obtain low dark current. In addition, it was found that the devices' performance was significantly improved by proper gas flow ratios of O2/Ar during deposition. The responsivity and UV-to-visible rejection ratio of photodetector were 16.08 A/W and 5.44×105 at 10 V applied bias with 280 nm illumination.

Original languageEnglish
Title of host publicationProceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-2
Number of pages2
ISBN (Electronic)9781538614457
DOIs
Publication statusPublished - 2018 Jun 22
Event7th International Symposium on Next-Generation Electronics, ISNE 2018 - Taipei, Taiwan
Duration: 2018 May 72018 May 9

Publication series

NameProceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018

Other

Other7th International Symposium on Next-Generation Electronics, ISNE 2018
CountryTaiwan
CityTaipei
Period18-05-0718-05-09

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

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