Effect of different properties of Cu(In1-xGax)Se2 thin films synthesized by femtosecond and nanosecond pulsed laser deposition

Mu Gong Tsai; Chia Chuan Chen; You Jyun Chen; In Gann Chen; Xiaoding Qi; Jung Chun Huang; Cen Ying Lin; Chung Wei Cheng

doi:10.1117/12.2076554

Effect of different properties of Cu(In_1-xGa_x)Se₂ thin films synthesized by femtosecond and nanosecond pulsed laser deposition

Mu Gong Tsai, Chia Chuan Chen, You Jyun Chen, In Gann Chen, Xiaoding Qi, Jung Chun Huang, Cen Ying Lin, Chung Wei Cheng

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Two kinds of pulsed laser sources, femtosecond laser (fs laser) and nanosecond laser (ns laser), were used in the pulsed laser deposition (PLD) system to synthesize copper indium gallium selenium (CIGS) thin films at the substrate temperature from room temperature (RT) and 500°C. Different surface morphology, crystallinity, and stoichiometric ratio were observed on CIGS thin films deposited by femtosecond pulsed laser deposition (fs-PLD) and nanosecond pulsed laser deposition (ns-PLD) respectively, that resulted in different optical and electrical properties. It is proposed that the laser absorption of CIGS target with different laser wavelength caused the difference in laser penetration depths into the target, so that the stoichiometric ratio of the evaporated materials splashing from the target were different between fs-PLD and ns-PLD processes.

Original language	English
Title of host publication	Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XX
Editors	Stephan Roth, Xianfan Xu, Yoshiki Nakata, Beat Neuenschwander
Publisher	SPIE
ISBN (Electronic)	9781628414400
DOIs	https://doi.org/10.1117/12.2076554
Publication status	Published - 2015
Event	Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XX - San Francisco, United States Duration: 2015 Feb 9 → 2015 Feb 12

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	9350
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Other

Other	Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XX
Country/Territory	United States
City	San Francisco
Period	15-02-09 → 15-02-12

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.2076554

Cite this

Tsai, M. G., Chen, C. C., Chen, Y. J., Chen, I. G., Qi, X., Huang, J. C., Lin, C. Y., & Cheng, C. W. (2015). Effect of different properties of Cu(In_1-xGa_x)Se₂ thin films synthesized by femtosecond and nanosecond pulsed laser deposition. In S. Roth, X. Xu, Y. Nakata, & B. Neuenschwander (Eds.), Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XX [935019] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9350). SPIE. https://doi.org/10.1117/12.2076554

Tsai, Mu Gong ; Chen, Chia Chuan ; Chen, You Jyun et al. / Effect of different properties of Cu(In_1-xGa_x)Se₂ thin films synthesized by femtosecond and nanosecond pulsed laser deposition. Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XX. editor / Stephan Roth ; Xianfan Xu ; Yoshiki Nakata ; Beat Neuenschwander. SPIE, 2015. (Proceedings of SPIE - The International Society for Optical Engineering).

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title = "Effect of different properties of Cu(In1-xGax)Se2 thin films synthesized by femtosecond and nanosecond pulsed laser deposition",

abstract = "Two kinds of pulsed laser sources, femtosecond laser (fs laser) and nanosecond laser (ns laser), were used in the pulsed laser deposition (PLD) system to synthesize copper indium gallium selenium (CIGS) thin films at the substrate temperature from room temperature (RT) and 500°C. Different surface morphology, crystallinity, and stoichiometric ratio were observed on CIGS thin films deposited by femtosecond pulsed laser deposition (fs-PLD) and nanosecond pulsed laser deposition (ns-PLD) respectively, that resulted in different optical and electrical properties. It is proposed that the laser absorption of CIGS target with different laser wavelength caused the difference in laser penetration depths into the target, so that the stoichiometric ratio of the evaporated materials splashing from the target were different between fs-PLD and ns-PLD processes.",

author = "Tsai, {Mu Gong} and Chen, {Chia Chuan} and Chen, {You Jyun} and Chen, {In Gann} and Xiaoding Qi and Huang, {Jung Chun} and Lin, {Cen Ying} and Cheng, {Chung Wei}",

year = "2015",

doi = "10.1117/12.2076554",

language = "English",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

editor = "Stephan Roth and Xianfan Xu and Yoshiki Nakata and Beat Neuenschwander",

booktitle = "Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XX",

address = "United States",

note = "Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XX ; Conference date: 09-02-2015 Through 12-02-2015",

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Tsai, MG, Chen, CC, Chen, YJ, Chen, IG , Qi, X , Huang, JC, Lin, CY & Cheng, CW 2015, Effect of different properties of Cu(In_1-xGa_x)Se₂ thin films synthesized by femtosecond and nanosecond pulsed laser deposition. in S Roth, X Xu, Y Nakata & B Neuenschwander (eds), Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XX., 935019, Proceedings of SPIE - The International Society for Optical Engineering, vol. 9350, SPIE, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XX, San Francisco, United States, 15-02-09. https://doi.org/10.1117/12.2076554

Effect of different properties of Cu(In_1-xGa_x)Se₂ thin films synthesized by femtosecond and nanosecond pulsed laser deposition. / Tsai, Mu Gong; Chen, Chia Chuan; Chen, You Jyun et al.
Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XX. ed. / Stephan Roth; Xianfan Xu; Yoshiki Nakata; Beat Neuenschwander. SPIE, 2015. 935019 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9350).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Tsai, Mu Gong

AU - Chen, Chia Chuan

AU - Chen, You Jyun

AU - Chen, In Gann

AU - Qi, Xiaoding

AU - Huang, Jung Chun

AU - Lin, Cen Ying

AU - Cheng, Chung Wei

PY - 2015

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N2 - Two kinds of pulsed laser sources, femtosecond laser (fs laser) and nanosecond laser (ns laser), were used in the pulsed laser deposition (PLD) system to synthesize copper indium gallium selenium (CIGS) thin films at the substrate temperature from room temperature (RT) and 500°C. Different surface morphology, crystallinity, and stoichiometric ratio were observed on CIGS thin films deposited by femtosecond pulsed laser deposition (fs-PLD) and nanosecond pulsed laser deposition (ns-PLD) respectively, that resulted in different optical and electrical properties. It is proposed that the laser absorption of CIGS target with different laser wavelength caused the difference in laser penetration depths into the target, so that the stoichiometric ratio of the evaporated materials splashing from the target were different between fs-PLD and ns-PLD processes.

AB - Two kinds of pulsed laser sources, femtosecond laser (fs laser) and nanosecond laser (ns laser), were used in the pulsed laser deposition (PLD) system to synthesize copper indium gallium selenium (CIGS) thin films at the substrate temperature from room temperature (RT) and 500°C. Different surface morphology, crystallinity, and stoichiometric ratio were observed on CIGS thin films deposited by femtosecond pulsed laser deposition (fs-PLD) and nanosecond pulsed laser deposition (ns-PLD) respectively, that resulted in different optical and electrical properties. It is proposed that the laser absorption of CIGS target with different laser wavelength caused the difference in laser penetration depths into the target, so that the stoichiometric ratio of the evaporated materials splashing from the target were different between fs-PLD and ns-PLD processes.

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Tsai MG, Chen CC, Chen YJ, Chen IG , Qi X , Huang JC et al. Effect of different properties of Cu(In_1-xGa_x)Se₂ thin films synthesized by femtosecond and nanosecond pulsed laser deposition. In Roth S, Xu X, Nakata Y, Neuenschwander B, editors, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XX. SPIE. 2015. 935019. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.2076554