Effect of different properties of Cu(In1-xGax)Se2 thin films synthesized by femtosecond and nanosecond pulsed laser deposition

Mu Gong Tsai, Chia Chuan Chen, You Jyun Chen, In Gann Chen, Xiaoding Qi, Jung Chun Huang, Cen Ying Lin, Chung Wei Cheng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Two kinds of pulsed laser sources, femtosecond laser (fs laser) and nanosecond laser (ns laser), were used in the pulsed laser deposition (PLD) system to synthesize copper indium gallium selenium (CIGS) thin films at the substrate temperature from room temperature (RT) and 500°C. Different surface morphology, crystallinity, and stoichiometric ratio were observed on CIGS thin films deposited by femtosecond pulsed laser deposition (fs-PLD) and nanosecond pulsed laser deposition (ns-PLD) respectively, that resulted in different optical and electrical properties. It is proposed that the laser absorption of CIGS target with different laser wavelength caused the difference in laser penetration depths into the target, so that the stoichiometric ratio of the evaporated materials splashing from the target were different between fs-PLD and ns-PLD processes.

Original languageEnglish
Title of host publicationLaser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XX
EditorsStephan Roth, Xianfan Xu, Yoshiki Nakata, Beat Neuenschwander
PublisherSPIE
ISBN (Electronic)9781628414400
DOIs
Publication statusPublished - 2015 Jan 1
EventLaser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XX - San Francisco, United States
Duration: 2015 Feb 92015 Feb 12

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume9350
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Other

OtherLaser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XX
CountryUnited States
CitySan Francisco
Period15-02-0915-02-12

Fingerprint

Pulsed Laser Deposition
Femtosecond
Pulsed laser deposition
pulsed laser deposition
Thin Films
Gallium
Indium
Femtosecond Laser
Selenium
Thin films
selenium
Copper
Laser
gallium
indium
thin films
Lasers
lasers
copper
Target

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Tsai, M. G., Chen, C. C., Chen, Y. J., Chen, I. G., Qi, X., Huang, J. C., ... Cheng, C. W. (2015). Effect of different properties of Cu(In1-xGax)Se2 thin films synthesized by femtosecond and nanosecond pulsed laser deposition. In S. Roth, X. Xu, Y. Nakata, & B. Neuenschwander (Eds.), Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XX [935019] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9350). SPIE. https://doi.org/10.1117/12.2076554
Tsai, Mu Gong ; Chen, Chia Chuan ; Chen, You Jyun ; Chen, In Gann ; Qi, Xiaoding ; Huang, Jung Chun ; Lin, Cen Ying ; Cheng, Chung Wei. / Effect of different properties of Cu(In1-xGax)Se2 thin films synthesized by femtosecond and nanosecond pulsed laser deposition. Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XX. editor / Stephan Roth ; Xianfan Xu ; Yoshiki Nakata ; Beat Neuenschwander. SPIE, 2015. (Proceedings of SPIE - The International Society for Optical Engineering).
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abstract = "Two kinds of pulsed laser sources, femtosecond laser (fs laser) and nanosecond laser (ns laser), were used in the pulsed laser deposition (PLD) system to synthesize copper indium gallium selenium (CIGS) thin films at the substrate temperature from room temperature (RT) and 500°C. Different surface morphology, crystallinity, and stoichiometric ratio were observed on CIGS thin films deposited by femtosecond pulsed laser deposition (fs-PLD) and nanosecond pulsed laser deposition (ns-PLD) respectively, that resulted in different optical and electrical properties. It is proposed that the laser absorption of CIGS target with different laser wavelength caused the difference in laser penetration depths into the target, so that the stoichiometric ratio of the evaporated materials splashing from the target were different between fs-PLD and ns-PLD processes.",
author = "Tsai, {Mu Gong} and Chen, {Chia Chuan} and Chen, {You Jyun} and Chen, {In Gann} and Xiaoding Qi and Huang, {Jung Chun} and Lin, {Cen Ying} and Cheng, {Chung Wei}",
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Tsai, MG, Chen, CC, Chen, YJ, Chen, IG, Qi, X, Huang, JC, Lin, CY & Cheng, CW 2015, Effect of different properties of Cu(In1-xGax)Se2 thin films synthesized by femtosecond and nanosecond pulsed laser deposition. in S Roth, X Xu, Y Nakata & B Neuenschwander (eds), Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XX., 935019, Proceedings of SPIE - The International Society for Optical Engineering, vol. 9350, SPIE, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XX, San Francisco, United States, 15-02-09. https://doi.org/10.1117/12.2076554

Effect of different properties of Cu(In1-xGax)Se2 thin films synthesized by femtosecond and nanosecond pulsed laser deposition. / Tsai, Mu Gong; Chen, Chia Chuan; Chen, You Jyun; Chen, In Gann; Qi, Xiaoding; Huang, Jung Chun; Lin, Cen Ying; Cheng, Chung Wei.

Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XX. ed. / Stephan Roth; Xianfan Xu; Yoshiki Nakata; Beat Neuenschwander. SPIE, 2015. 935019 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9350).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AU - Tsai, Mu Gong

AU - Chen, Chia Chuan

AU - Chen, You Jyun

AU - Chen, In Gann

AU - Qi, Xiaoding

AU - Huang, Jung Chun

AU - Lin, Cen Ying

AU - Cheng, Chung Wei

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N2 - Two kinds of pulsed laser sources, femtosecond laser (fs laser) and nanosecond laser (ns laser), were used in the pulsed laser deposition (PLD) system to synthesize copper indium gallium selenium (CIGS) thin films at the substrate temperature from room temperature (RT) and 500°C. Different surface morphology, crystallinity, and stoichiometric ratio were observed on CIGS thin films deposited by femtosecond pulsed laser deposition (fs-PLD) and nanosecond pulsed laser deposition (ns-PLD) respectively, that resulted in different optical and electrical properties. It is proposed that the laser absorption of CIGS target with different laser wavelength caused the difference in laser penetration depths into the target, so that the stoichiometric ratio of the evaporated materials splashing from the target were different between fs-PLD and ns-PLD processes.

AB - Two kinds of pulsed laser sources, femtosecond laser (fs laser) and nanosecond laser (ns laser), were used in the pulsed laser deposition (PLD) system to synthesize copper indium gallium selenium (CIGS) thin films at the substrate temperature from room temperature (RT) and 500°C. Different surface morphology, crystallinity, and stoichiometric ratio were observed on CIGS thin films deposited by femtosecond pulsed laser deposition (fs-PLD) and nanosecond pulsed laser deposition (ns-PLD) respectively, that resulted in different optical and electrical properties. It is proposed that the laser absorption of CIGS target with different laser wavelength caused the difference in laser penetration depths into the target, so that the stoichiometric ratio of the evaporated materials splashing from the target were different between fs-PLD and ns-PLD processes.

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Tsai MG, Chen CC, Chen YJ, Chen IG, Qi X, Huang JC et al. Effect of different properties of Cu(In1-xGax)Se2 thin films synthesized by femtosecond and nanosecond pulsed laser deposition. In Roth S, Xu X, Nakata Y, Neuenschwander B, editors, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XX. SPIE. 2015. 935019. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.2076554