Effect of dilution gas on SiCN films growth using methylamine

J. J. Wu, K. H. Chen, C. Y. Wen, L. C. Chen, Y. C. Yu, C. W. Wang, E. K. Lin

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6 Citations (Scopus)

Abstract

Methylamine (CH3NH2) was employed with SiH4 to deposit amorphous silicon carbon nitride films due to its easy dissociation as well as containing both carbon and nitrogen elements. The effect of dilution gas, such as H2, N2, Ar and He on the film growth was studied in electron cyclotron resonance plasma chemical vapor deposition (CVD) reactor. At a microwave power of 250 W and a substrate temperature of 700°C, ternary silicon carbon nitride film has been successfully deposited using He as dilution gas. However, only binary silicon nitride films were formed using dilution gases of Ar, N2 and H2 but otherwise similar conditions. Characterization of the films using FTIR, XPS and optical emission study of the plasma were employed to study the growth process. Possible explanations and discussion for the growth behaviors of the dilution gases are presented.

Original languageEnglish
Pages (from-to)240-244
Number of pages5
JournalMaterials Chemistry and Physics
Volume72
Issue number2
DOIs
Publication statusPublished - 2001 Nov 1

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

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    Wu, J. J., Chen, K. H., Wen, C. Y., Chen, L. C., Yu, Y. C., Wang, C. W., & Lin, E. K. (2001). Effect of dilution gas on SiCN films growth using methylamine. Materials Chemistry and Physics, 72(2), 240-244. https://doi.org/10.1016/S0254-0584(01)00445-X