Effect of doping element on the interfacial reaction behavior of Ag alloy wires bonding on Al pad after HTST and TCT tests

Yu Wei Lin, Mei Chen Su, Wei Hsiang Huang, Ying Ta Chiu, Te Ping Shih, Kwang Lung Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Ag alloy wire of high Ag content showed the lower cost and resistivity than the 88%Ag, 95%Ag and 96%Ag alloy wires. In this study, the Au, In, Ni and Cu elements were doped in Ag-2.0%Pd alloy to form the ternary Ag-Pd-Au, Ag-Pd-In, and quaternary Ag-Pd-Au-Ni, Ag-Pd-Au-Cu alloy wires. The interfacial reactions of the Ag alloy wires were investigated after HTST and TCT reliability tests. These tests show that Ag-Pd-In and Ag-Pd-Au-Ni alloy wires exhibit excellent reliability performance. The high Ag content Ag2Al and Ag3Al IMCs trend to form at the Ag-Pd-In/Al, Ag-Pd-Au-Ni/Al and Ag-Pd-Au-Cu/Al interfaces after prolonged HTST test for 2000 h. However, the Ag3Al2 compound is formed at the Ag-Pd-Au/Al interface after HTST test for 2000 h. The elemental dopant can diffuse from Ag alloy wire to the interface and dissolved in the intermetallic compound after prolonged tests. The interface of failed Ag-Pd-Au-Cu and Ag-Pd-Au ball bonds showed the formation of cracks at the Ag ball bonds/Ag3Al2 IMCs interfaces. The crack may be the path for the diffusion of chloride ion and sulfate ion from the molding compound to cause the interfacial oxidation.

Original languageEnglish
Title of host publicationProceedings of the 2016 IEEE 18th Electronics Packaging Technology Conference, EPTC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages613-619
Number of pages7
ISBN (Electronic)9781509043682
DOIs
Publication statusPublished - 2017 Feb 21
Event18th IEEE Electronics Packaging Technology Conference, EPTC 2016 - Singapore, Singapore
Duration: 2016 Nov 302016 Dec 3

Publication series

NameProceedings of the 2016 IEEE 18th Electronics Packaging Technology Conference, EPTC 2016

Other

Other18th IEEE Electronics Packaging Technology Conference, EPTC 2016
CountrySingapore
CitySingapore
Period16-11-3016-12-03

Fingerprint

Surface chemistry
Chemical elements
Doping (additives)
Wire
Ions
Cracks
Sheet molding compounds
Sulfates
Intermetallics
Chlorides
Oxidation
Costs

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials
  • Metals and Alloys

Cite this

Lin, Y. W., Su, M. C., Huang, W. H., Chiu, Y. T., Shih, T. P., & Lin, K. L. (2017). Effect of doping element on the interfacial reaction behavior of Ag alloy wires bonding on Al pad after HTST and TCT tests. In Proceedings of the 2016 IEEE 18th Electronics Packaging Technology Conference, EPTC 2016 (pp. 613-619). [7861553] (Proceedings of the 2016 IEEE 18th Electronics Packaging Technology Conference, EPTC 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EPTC.2016.7861553
Lin, Yu Wei ; Su, Mei Chen ; Huang, Wei Hsiang ; Chiu, Ying Ta ; Shih, Te Ping ; Lin, Kwang Lung. / Effect of doping element on the interfacial reaction behavior of Ag alloy wires bonding on Al pad after HTST and TCT tests. Proceedings of the 2016 IEEE 18th Electronics Packaging Technology Conference, EPTC 2016. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 613-619 (Proceedings of the 2016 IEEE 18th Electronics Packaging Technology Conference, EPTC 2016).
@inproceedings{cc18529f546849dcbe2b177f4aea5f87,
title = "Effect of doping element on the interfacial reaction behavior of Ag alloy wires bonding on Al pad after HTST and TCT tests",
abstract = "Ag alloy wire of high Ag content showed the lower cost and resistivity than the 88{\%}Ag, 95{\%}Ag and 96{\%}Ag alloy wires. In this study, the Au, In, Ni and Cu elements were doped in Ag-2.0{\%}Pd alloy to form the ternary Ag-Pd-Au, Ag-Pd-In, and quaternary Ag-Pd-Au-Ni, Ag-Pd-Au-Cu alloy wires. The interfacial reactions of the Ag alloy wires were investigated after HTST and TCT reliability tests. These tests show that Ag-Pd-In and Ag-Pd-Au-Ni alloy wires exhibit excellent reliability performance. The high Ag content Ag2Al and Ag3Al IMCs trend to form at the Ag-Pd-In/Al, Ag-Pd-Au-Ni/Al and Ag-Pd-Au-Cu/Al interfaces after prolonged HTST test for 2000 h. However, the Ag3Al2 compound is formed at the Ag-Pd-Au/Al interface after HTST test for 2000 h. The elemental dopant can diffuse from Ag alloy wire to the interface and dissolved in the intermetallic compound after prolonged tests. The interface of failed Ag-Pd-Au-Cu and Ag-Pd-Au ball bonds showed the formation of cracks at the Ag ball bonds/Ag3Al2 IMCs interfaces. The crack may be the path for the diffusion of chloride ion and sulfate ion from the molding compound to cause the interfacial oxidation.",
author = "Lin, {Yu Wei} and Su, {Mei Chen} and Huang, {Wei Hsiang} and Chiu, {Ying Ta} and Shih, {Te Ping} and Lin, {Kwang Lung}",
year = "2017",
month = "2",
day = "21",
doi = "10.1109/EPTC.2016.7861553",
language = "English",
series = "Proceedings of the 2016 IEEE 18th Electronics Packaging Technology Conference, EPTC 2016",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "613--619",
booktitle = "Proceedings of the 2016 IEEE 18th Electronics Packaging Technology Conference, EPTC 2016",
address = "United States",

}

Lin, YW, Su, MC, Huang, WH, Chiu, YT, Shih, TP & Lin, KL 2017, Effect of doping element on the interfacial reaction behavior of Ag alloy wires bonding on Al pad after HTST and TCT tests. in Proceedings of the 2016 IEEE 18th Electronics Packaging Technology Conference, EPTC 2016., 7861553, Proceedings of the 2016 IEEE 18th Electronics Packaging Technology Conference, EPTC 2016, Institute of Electrical and Electronics Engineers Inc., pp. 613-619, 18th IEEE Electronics Packaging Technology Conference, EPTC 2016, Singapore, Singapore, 16-11-30. https://doi.org/10.1109/EPTC.2016.7861553

Effect of doping element on the interfacial reaction behavior of Ag alloy wires bonding on Al pad after HTST and TCT tests. / Lin, Yu Wei; Su, Mei Chen; Huang, Wei Hsiang; Chiu, Ying Ta; Shih, Te Ping; Lin, Kwang Lung.

Proceedings of the 2016 IEEE 18th Electronics Packaging Technology Conference, EPTC 2016. Institute of Electrical and Electronics Engineers Inc., 2017. p. 613-619 7861553 (Proceedings of the 2016 IEEE 18th Electronics Packaging Technology Conference, EPTC 2016).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Effect of doping element on the interfacial reaction behavior of Ag alloy wires bonding on Al pad after HTST and TCT tests

AU - Lin, Yu Wei

AU - Su, Mei Chen

AU - Huang, Wei Hsiang

AU - Chiu, Ying Ta

AU - Shih, Te Ping

AU - Lin, Kwang Lung

PY - 2017/2/21

Y1 - 2017/2/21

N2 - Ag alloy wire of high Ag content showed the lower cost and resistivity than the 88%Ag, 95%Ag and 96%Ag alloy wires. In this study, the Au, In, Ni and Cu elements were doped in Ag-2.0%Pd alloy to form the ternary Ag-Pd-Au, Ag-Pd-In, and quaternary Ag-Pd-Au-Ni, Ag-Pd-Au-Cu alloy wires. The interfacial reactions of the Ag alloy wires were investigated after HTST and TCT reliability tests. These tests show that Ag-Pd-In and Ag-Pd-Au-Ni alloy wires exhibit excellent reliability performance. The high Ag content Ag2Al and Ag3Al IMCs trend to form at the Ag-Pd-In/Al, Ag-Pd-Au-Ni/Al and Ag-Pd-Au-Cu/Al interfaces after prolonged HTST test for 2000 h. However, the Ag3Al2 compound is formed at the Ag-Pd-Au/Al interface after HTST test for 2000 h. The elemental dopant can diffuse from Ag alloy wire to the interface and dissolved in the intermetallic compound after prolonged tests. The interface of failed Ag-Pd-Au-Cu and Ag-Pd-Au ball bonds showed the formation of cracks at the Ag ball bonds/Ag3Al2 IMCs interfaces. The crack may be the path for the diffusion of chloride ion and sulfate ion from the molding compound to cause the interfacial oxidation.

AB - Ag alloy wire of high Ag content showed the lower cost and resistivity than the 88%Ag, 95%Ag and 96%Ag alloy wires. In this study, the Au, In, Ni and Cu elements were doped in Ag-2.0%Pd alloy to form the ternary Ag-Pd-Au, Ag-Pd-In, and quaternary Ag-Pd-Au-Ni, Ag-Pd-Au-Cu alloy wires. The interfacial reactions of the Ag alloy wires were investigated after HTST and TCT reliability tests. These tests show that Ag-Pd-In and Ag-Pd-Au-Ni alloy wires exhibit excellent reliability performance. The high Ag content Ag2Al and Ag3Al IMCs trend to form at the Ag-Pd-In/Al, Ag-Pd-Au-Ni/Al and Ag-Pd-Au-Cu/Al interfaces after prolonged HTST test for 2000 h. However, the Ag3Al2 compound is formed at the Ag-Pd-Au/Al interface after HTST test for 2000 h. The elemental dopant can diffuse from Ag alloy wire to the interface and dissolved in the intermetallic compound after prolonged tests. The interface of failed Ag-Pd-Au-Cu and Ag-Pd-Au ball bonds showed the formation of cracks at the Ag ball bonds/Ag3Al2 IMCs interfaces. The crack may be the path for the diffusion of chloride ion and sulfate ion from the molding compound to cause the interfacial oxidation.

UR - http://www.scopus.com/inward/record.url?scp=85016109576&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85016109576&partnerID=8YFLogxK

U2 - 10.1109/EPTC.2016.7861553

DO - 10.1109/EPTC.2016.7861553

M3 - Conference contribution

AN - SCOPUS:85016109576

T3 - Proceedings of the 2016 IEEE 18th Electronics Packaging Technology Conference, EPTC 2016

SP - 613

EP - 619

BT - Proceedings of the 2016 IEEE 18th Electronics Packaging Technology Conference, EPTC 2016

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Lin YW, Su MC, Huang WH, Chiu YT, Shih TP, Lin KL. Effect of doping element on the interfacial reaction behavior of Ag alloy wires bonding on Al pad after HTST and TCT tests. In Proceedings of the 2016 IEEE 18th Electronics Packaging Technology Conference, EPTC 2016. Institute of Electrical and Electronics Engineers Inc. 2017. p. 613-619. 7861553. (Proceedings of the 2016 IEEE 18th Electronics Packaging Technology Conference, EPTC 2016). https://doi.org/10.1109/EPTC.2016.7861553