Effect of drift-region concentration on hot-carrier-induced Ron degradation in nLDMOS transistors

Jone-Fang Chen, J. R. Lee, Kuo Ming Wu, Tsung Yi Huang, C. M. Liu

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

In this letter, hot-carrier-induced on-resistance (Ron) degradation in lateral DMOS transistors with different n-type drift-drain (NDD) region concentration is investigated. Increasing NDD concentration results in greater bulk (Ib) and gate currents (Ig), but Ron degradation is improved. Technology computer-aided design simulations reveal that high NDD concentration increases impact-ionization rate in accumulation (related to Ib increase) and channel regions (related to Ig increase) but reduces impact-ionization rate in spacer region. Charge-pumping data confirm that hot-carrier-induced interface state created in the spacer region is reduced, leading to improved Ron degradation in high-NDD-concentration device.

Original languageEnglish
Pages (from-to)771-774
Number of pages4
JournalIEEE Electron Device Letters
Volume29
Issue number7
DOIs
Publication statusPublished - 2008 Jul 1

Fingerprint

Hot carriers
Transistors
Impact ionization
Degradation
Interface states
Computer aided design

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Chen, Jone-Fang ; Lee, J. R. ; Wu, Kuo Ming ; Huang, Tsung Yi ; Liu, C. M. / Effect of drift-region concentration on hot-carrier-induced Ron degradation in nLDMOS transistors. In: IEEE Electron Device Letters. 2008 ; Vol. 29, No. 7. pp. 771-774.
@article{73298236d01147d88475e957992cab66,
title = "Effect of drift-region concentration on hot-carrier-induced Ron degradation in nLDMOS transistors",
abstract = "In this letter, hot-carrier-induced on-resistance (Ron) degradation in lateral DMOS transistors with different n-type drift-drain (NDD) region concentration is investigated. Increasing NDD concentration results in greater bulk (Ib) and gate currents (Ig), but Ron degradation is improved. Technology computer-aided design simulations reveal that high NDD concentration increases impact-ionization rate in accumulation (related to Ib increase) and channel regions (related to Ig increase) but reduces impact-ionization rate in spacer region. Charge-pumping data confirm that hot-carrier-induced interface state created in the spacer region is reduced, leading to improved Ron degradation in high-NDD-concentration device.",
author = "Jone-Fang Chen and Lee, {J. R.} and Wu, {Kuo Ming} and Huang, {Tsung Yi} and Liu, {C. M.}",
year = "2008",
month = "7",
day = "1",
doi = "10.1109/LED.2008.2000610",
language = "English",
volume = "29",
pages = "771--774",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "7",

}

Effect of drift-region concentration on hot-carrier-induced Ron degradation in nLDMOS transistors. / Chen, Jone-Fang; Lee, J. R.; Wu, Kuo Ming; Huang, Tsung Yi; Liu, C. M.

In: IEEE Electron Device Letters, Vol. 29, No. 7, 01.07.2008, p. 771-774.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effect of drift-region concentration on hot-carrier-induced Ron degradation in nLDMOS transistors

AU - Chen, Jone-Fang

AU - Lee, J. R.

AU - Wu, Kuo Ming

AU - Huang, Tsung Yi

AU - Liu, C. M.

PY - 2008/7/1

Y1 - 2008/7/1

N2 - In this letter, hot-carrier-induced on-resistance (Ron) degradation in lateral DMOS transistors with different n-type drift-drain (NDD) region concentration is investigated. Increasing NDD concentration results in greater bulk (Ib) and gate currents (Ig), but Ron degradation is improved. Technology computer-aided design simulations reveal that high NDD concentration increases impact-ionization rate in accumulation (related to Ib increase) and channel regions (related to Ig increase) but reduces impact-ionization rate in spacer region. Charge-pumping data confirm that hot-carrier-induced interface state created in the spacer region is reduced, leading to improved Ron degradation in high-NDD-concentration device.

AB - In this letter, hot-carrier-induced on-resistance (Ron) degradation in lateral DMOS transistors with different n-type drift-drain (NDD) region concentration is investigated. Increasing NDD concentration results in greater bulk (Ib) and gate currents (Ig), but Ron degradation is improved. Technology computer-aided design simulations reveal that high NDD concentration increases impact-ionization rate in accumulation (related to Ib increase) and channel regions (related to Ig increase) but reduces impact-ionization rate in spacer region. Charge-pumping data confirm that hot-carrier-induced interface state created in the spacer region is reduced, leading to improved Ron degradation in high-NDD-concentration device.

UR - http://www.scopus.com/inward/record.url?scp=47249092861&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=47249092861&partnerID=8YFLogxK

U2 - 10.1109/LED.2008.2000610

DO - 10.1109/LED.2008.2000610

M3 - Article

AN - SCOPUS:47249092861

VL - 29

SP - 771

EP - 774

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 7

ER -