Effect of drift-region concentration on hot-carrier-induced Ron degradation in nLDMOS transistors

Jone-Fang Chen, J. R. Lee, Kuo Ming Wu, Tsung Yi Huang, C. M. Liu

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)


In this letter, hot-carrier-induced on-resistance (Ron) degradation in lateral DMOS transistors with different n-type drift-drain (NDD) region concentration is investigated. Increasing NDD concentration results in greater bulk (Ib) and gate currents (Ig), but Ron degradation is improved. Technology computer-aided design simulations reveal that high NDD concentration increases impact-ionization rate in accumulation (related to Ib increase) and channel regions (related to Ig increase) but reduces impact-ionization rate in spacer region. Charge-pumping data confirm that hot-carrier-induced interface state created in the spacer region is reduced, leading to improved Ron degradation in high-NDD-concentration device.

Original languageEnglish
Pages (from-to)771-774
Number of pages4
JournalIEEE Electron Device Letters
Issue number7
Publication statusPublished - 2008 Jul 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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