Abstract
In this letter, hot-carrier-induced on-resistance (Ron) degradation in lateral DMOS transistors with different n-type drift-drain (NDD) region concentration is investigated. Increasing NDD concentration results in greater bulk (Ib) and gate currents (Ig), but Ron degradation is improved. Technology computer-aided design simulations reveal that high NDD concentration increases impact-ionization rate in accumulation (related to Ib increase) and channel regions (related to Ig increase) but reduces impact-ionization rate in spacer region. Charge-pumping data confirm that hot-carrier-induced interface state created in the spacer region is reduced, leading to improved Ron degradation in high-NDD-concentration device.
Original language | English |
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Pages (from-to) | 771-774 |
Number of pages | 4 |
Journal | IEEE Electron Device Letters |
Volume | 29 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2008 Jul |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering