Effect of ELA Energy Density on Self-Heating Stress in Low-Temperature Polycrystalline Silicon Thin-Film Transistors

Shin Ping Huang, Hong Chih Chen, Po Hsun Chen, Yu Zhe Zheng, Ann Kuo Chu, Yu Shan Shih, Yu Xuan Wang, Chia Chuan Wu, Yu An Chen, Pei Jun Sun, Hui Chun Huang, Wei Chih Lai, Ting Chang Chang

Research output: Contribution to journalArticlepeer-review

Abstract

The extent of the poly-silicon crystalline protrusion, a result of differences in excimer laser annealing (ELA), affects the performance and reliability of thin-film transistors (TFTs). This study investigates the degradation mechanism of the low-temperature polycrystalline silicon (LTPS) TFT devices with differences in crystalline protrusion under self-heating stress (SHS). Higher ELA energy will induce higher protrusion height in the interface between the poly-silicon and gate insulator (GI). This surface morphology leads to serious charge trapping into the GI layers; in contrast, the smallest degradation after SHS can be seen in the devices with the lowest protrusion height. This indicates that the degradation is caused by the surface morphology between the poly-Si and GI interface. In addition, the COMSOL simulation results confirm that the large electric field in the GI layer appears in the rough surface morphology devices; therefore, choosing the appropriate ELA energy of the poly-Si is beneficial for the applications of the driving TFT in organic light-emitting diode (OLED) display in the manufacturing industry.

Original languageEnglish
Article number9140350
Pages (from-to)3163-3166
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume67
Issue number8
DOIs
Publication statusPublished - 2020 Aug

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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