TY - JOUR
T1 - Effect of electric potential and mechanical force on copper electro-chemical mechanical planarization
AU - Chen, Sheng Wen
AU - Kung, Te Ming
AU - Liu, Chuan Pu
AU - Chang, Shih Chieh
AU - Cheng, Yi Lung
AU - Wang, Ying Lang
PY - 2012/3
Y1 - 2012/3
N2 - In this study, the dependence of Cu electrochemical mechanical planarization (ECMP) rate on electric potential and mechanical force in electrolyte is investigated using potentiodynamic analysis, electrochemical impedance spectroscopy (EIS), and X-ray photoelectron spectroscopy (XPS). In chemical etching, CMP, electropolishing, and ECMP processes, the Cu removal rate is mainly affected by the interplay between electric potential and mechanical force. An equivalent circuit is built by fitting the EIS results to explain the behavior of Cu dissolution and Cu passive film. The Cu dissolution rate increased with decreasing charge-transfer time-delay. The resistance of the Cu passive film (R p) is proportional to the intensity ratio of Cu 2O=[Cu(OH) 2 + CuO].
AB - In this study, the dependence of Cu electrochemical mechanical planarization (ECMP) rate on electric potential and mechanical force in electrolyte is investigated using potentiodynamic analysis, electrochemical impedance spectroscopy (EIS), and X-ray photoelectron spectroscopy (XPS). In chemical etching, CMP, electropolishing, and ECMP processes, the Cu removal rate is mainly affected by the interplay between electric potential and mechanical force. An equivalent circuit is built by fitting the EIS results to explain the behavior of Cu dissolution and Cu passive film. The Cu dissolution rate increased with decreasing charge-transfer time-delay. The resistance of the Cu passive film (R p) is proportional to the intensity ratio of Cu 2O=[Cu(OH) 2 + CuO].
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U2 - 10.1143/JJAP.51.036504
DO - 10.1143/JJAP.51.036504
M3 - Article
AN - SCOPUS:84863292930
SN - 0021-4922
VL - 51
JO - Japanese journal of applied physics
JF - Japanese journal of applied physics
IS - 3 PART 1
M1 - 036504
ER -