Effect of emitter ledge thickness on inGaPGaAs Heterojunction bipolar transistors

Tzu Pin Chen; Chi Jhung Lee; Shiou Ying Cheng; Wen Shiung Lour; Jung Hui Tsai; Der Feng Guo; Ghun Wei Ku; Wen-Chau Liu

doi:10.1149/1.3042272

Effect of emitter ledge thickness on inGaPGaAs Heterojunction bipolar transistors

Tzu Pin Chen, Chi Jhung Lee, Shiou Ying Cheng, Wen Shiung Lour, Jung Hui Tsai, Der Feng Guo, Ghun Wei Ku, Wen-Chau Liu

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The temperature-dependent characteristics of InGaPGaAs heterojunction bipolar transistors with different emitter ledge thickness (t) are studied and demonstrated. From experimental results, devices d3 (t=100 Å) and d4 (t=200 Å) show the highest current gains, lowest base current, and base current ideality factors. Devices d3 and d4 also exhibit an improved thermal stability on dc current-voltage characteristics. Moreover, device d4 shows the best reliability performance after a 200 h stress test. Therefore, the data support that the optimum emitter ledge thickness is between 100 and 200 Å.

Original language	English
Journal	Electrochemical and Solid-State Letters
Volume	12
Issue number	2
DOIs	https://doi.org/10.1149/1.3042272
Publication status	Published - 2009 Jan 1

All Science Journal Classification (ASJC) codes

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

Access to Document

10.1149/1.3042272

Cite this

@article{3e085d69968040e4947e3ce35b452fad,

title = "Effect of emitter ledge thickness on inGaPGaAs Heterojunction bipolar transistors",

abstract = "The temperature-dependent characteristics of InGaPGaAs heterojunction bipolar transistors with different emitter ledge thickness (t) are studied and demonstrated. From experimental results, devices d3 (t=100 {\AA}) and d4 (t=200 {\AA}) show the highest current gains, lowest base current, and base current ideality factors. Devices d3 and d4 also exhibit an improved thermal stability on dc current-voltage characteristics. Moreover, device d4 shows the best reliability performance after a 200 h stress test. Therefore, the data support that the optimum emitter ledge thickness is between 100 and 200 {\AA}.",

author = "Chen, {Tzu Pin} and Lee, {Chi Jhung} and Cheng, {Shiou Ying} and Lour, {Wen Shiung} and Tsai, {Jung Hui} and Guo, {Der Feng} and Ku, {Ghun Wei} and Wen-Chau Liu",

year = "2009",

month = jan,

day = "1",

doi = "10.1149/1.3042272",

language = "English",

volume = "12",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society, Inc.",

number = "2",

}

TY - JOUR

T1 - Effect of emitter ledge thickness on inGaPGaAs Heterojunction bipolar transistors

AU - Chen, Tzu Pin

AU - Lee, Chi Jhung

AU - Cheng, Shiou Ying

AU - Lour, Wen Shiung

AU - Tsai, Jung Hui

AU - Guo, Der Feng

AU - Ku, Ghun Wei

AU - Liu, Wen-Chau

PY - 2009/1/1

Y1 - 2009/1/1

N2 - The temperature-dependent characteristics of InGaPGaAs heterojunction bipolar transistors with different emitter ledge thickness (t) are studied and demonstrated. From experimental results, devices d3 (t=100 Å) and d4 (t=200 Å) show the highest current gains, lowest base current, and base current ideality factors. Devices d3 and d4 also exhibit an improved thermal stability on dc current-voltage characteristics. Moreover, device d4 shows the best reliability performance after a 200 h stress test. Therefore, the data support that the optimum emitter ledge thickness is between 100 and 200 Å.

AB - The temperature-dependent characteristics of InGaPGaAs heterojunction bipolar transistors with different emitter ledge thickness (t) are studied and demonstrated. From experimental results, devices d3 (t=100 Å) and d4 (t=200 Å) show the highest current gains, lowest base current, and base current ideality factors. Devices d3 and d4 also exhibit an improved thermal stability on dc current-voltage characteristics. Moreover, device d4 shows the best reliability performance after a 200 h stress test. Therefore, the data support that the optimum emitter ledge thickness is between 100 and 200 Å.

UR - http://www.scopus.com/inward/record.url?scp=57649218704&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=57649218704&partnerID=8YFLogxK

U2 - 10.1149/1.3042272

DO - 10.1149/1.3042272

M3 - Article

AN - SCOPUS:57649218704

VL - 12

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

SN - 1099-0062

IS - 2

ER -

Effect of emitter ledge thickness on inGaPGaAs Heterojunction bipolar transistors

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this