Effect of emitter ledge thickness on inGaPGaAs Heterojunction bipolar transistors

Tzu Pin Chen, Chi Jhung Lee, Shiou Ying Cheng, Wen Shiung Lour, Jung Hui Tsai, Der Feng Guo, Ghun Wei Ku, Wen-Chau Liu

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The temperature-dependent characteristics of InGaPGaAs heterojunction bipolar transistors with different emitter ledge thickness (t) are studied and demonstrated. From experimental results, devices d3 (t=100 Å) and d4 (t=200 Å) show the highest current gains, lowest base current, and base current ideality factors. Devices d3 and d4 also exhibit an improved thermal stability on dc current-voltage characteristics. Moreover, device d4 shows the best reliability performance after a 200 h stress test. Therefore, the data support that the optimum emitter ledge thickness is between 100 and 200 Å.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume12
Issue number2
DOIs
Publication statusPublished - 2009 Jan 1

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All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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