The temperature-dependent characteristics of InGaPGaAs heterojunction bipolar transistors with different emitter ledge thickness (t) are studied and demonstrated. From experimental results, devices d3 (t=100 Å) and d4 (t=200 Å) show the highest current gains, lowest base current, and base current ideality factors. Devices d3 and d4 also exhibit an improved thermal stability on dc current-voltage characteristics. Moreover, device d4 shows the best reliability performance after a 200 h stress test. Therefore, the data support that the optimum emitter ledge thickness is between 100 and 200 Å.
All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering