Effect of emitter ledge thickness on inGaPGaAs Heterojunction bipolar transistors

Tzu Pin Chen; Chi Jhung Lee; Shiou Ying Cheng; Wen Shiung Lour; Jung Hui Tsai; Der Feng Guo; Ghun Wei Ku; Wen-Chau Liu

doi:10.1149/1.3042272

Effect of emitter ledge thickness on inGaPGaAs Heterojunction bipolar transistors

Tzu Pin Chen, Chi Jhung Lee, Shiou Ying Cheng, Wen Shiung Lour, Jung Hui Tsai, Der Feng Guo, Ghun Wei Ku, Wen-Chau Liu

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The temperature-dependent characteristics of InGaPGaAs heterojunction bipolar transistors with different emitter ledge thickness (t) are studied and demonstrated. From experimental results, devices d3 (t=100 Å) and d4 (t=200 Å) show the highest current gains, lowest base current, and base current ideality factors. Devices d3 and d4 also exhibit an improved thermal stability on dc current-voltage characteristics. Moreover, device d4 shows the best reliability performance after a 200 h stress test. Therefore, the data support that the optimum emitter ledge thickness is between 100 and 200 Å.

Original language	English
Journal	Electrochemical and Solid-State Letters
Volume	12
Issue number	2
DOIs	https://doi.org/10.1149/1.3042272
Publication status	Published - 2009 Jan 1

All Science Journal Classification (ASJC) codes

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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@article{3e085d69968040e4947e3ce35b452fad,

title = "Effect of emitter ledge thickness on inGaPGaAs Heterojunction bipolar transistors",

abstract = "The temperature-dependent characteristics of InGaPGaAs heterojunction bipolar transistors with different emitter ledge thickness (t) are studied and demonstrated. From experimental results, devices d3 (t=100 {\AA}) and d4 (t=200 {\AA}) show the highest current gains, lowest base current, and base current ideality factors. Devices d3 and d4 also exhibit an improved thermal stability on dc current-voltage characteristics. Moreover, device d4 shows the best reliability performance after a 200 h stress test. Therefore, the data support that the optimum emitter ledge thickness is between 100 and 200 {\AA}.",

author = "Chen, {Tzu Pin} and Lee, {Chi Jhung} and Cheng, {Shiou Ying} and Lour, {Wen Shiung} and Tsai, {Jung Hui} and Guo, {Der Feng} and Ku, {Ghun Wei} and Wen-Chau Liu",

year = "2009",

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doi = "10.1149/1.3042272",

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T1 - Effect of emitter ledge thickness on inGaPGaAs Heterojunction bipolar transistors

AU - Chen, Tzu Pin

AU - Lee, Chi Jhung

AU - Cheng, Shiou Ying

AU - Lour, Wen Shiung

AU - Tsai, Jung Hui

AU - Guo, Der Feng

AU - Ku, Ghun Wei

AU - Liu, Wen-Chau

PY - 2009/1/1

Y1 - 2009/1/1

N2 - The temperature-dependent characteristics of InGaPGaAs heterojunction bipolar transistors with different emitter ledge thickness (t) are studied and demonstrated. From experimental results, devices d3 (t=100 Å) and d4 (t=200 Å) show the highest current gains, lowest base current, and base current ideality factors. Devices d3 and d4 also exhibit an improved thermal stability on dc current-voltage characteristics. Moreover, device d4 shows the best reliability performance after a 200 h stress test. Therefore, the data support that the optimum emitter ledge thickness is between 100 and 200 Å.

AB - The temperature-dependent characteristics of InGaPGaAs heterojunction bipolar transistors with different emitter ledge thickness (t) are studied and demonstrated. From experimental results, devices d3 (t=100 Å) and d4 (t=200 Å) show the highest current gains, lowest base current, and base current ideality factors. Devices d3 and d4 also exhibit an improved thermal stability on dc current-voltage characteristics. Moreover, device d4 shows the best reliability performance after a 200 h stress test. Therefore, the data support that the optimum emitter ledge thickness is between 100 and 200 Å.

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