Effect of excess-Pb on ferroelectric properties of Pb(Zr0.52Ti0.48)O3 thin films prepared by metal-organic decomposition process

Cheng Hsiung Lin; Wen Dung Hsu; I. Nan Lin

doi:10.1080/10584589908210181

Effect of excess-Pb on ferroelectric properties of Pb(Zr_0.52Ti_0.48)O₃ thin films prepared by metal-organic decomposition process

Cheng Hsiung Lin, Wen Dung Hsu, I. Nan Lin

Research output: Contribution to journal › Article › peer-review

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Abstract

The Pb(Zr_0.52Tio 43)03. PZT, thin films with good ferroelectric properties and leakage behavior are obtained by metal-organic decomposition (MOD) process. Stringent control in post-annealing process is required to circumvent the deleterious effect on electrical properties induced by the loss of Pb-species. Incorporation of excess-Pb species in precursors further effectively suppresses the leakage current (J_L) and increases remanent polarization (P_r), in accompany with the decrease in coercive force (E_c), for the PZT films. The best properties obtained are : P_r= 14.8 μ C/cm² and E_c=104.2 kV/cm.

Original language	English
Pages (from-to)	311-318
Number of pages	8
Journal	Integrated Ferroelectrics
Volume	25
Issue number	1-4
DOIs	https://doi.org/10.1080/10584589908210181
Publication status	Published - 1999

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Control and Systems Engineering
Ceramics and Composites
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1080/10584589908210181

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title = "Effect of excess-Pb on ferroelectric properties of Pb(Zr0.52Ti0.48)O3 thin films prepared by metal-organic decomposition process",

abstract = "The Pb(Zr0.52Tio 43)03. PZT, thin films with good ferroelectric properties and leakage behavior are obtained by metal-organic decomposition (MOD) process. Stringent control in post-annealing process is required to circumvent the deleterious effect on electrical properties induced by the loss of Pb-species. Incorporation of excess-Pb species in precursors further effectively suppresses the leakage current (JL) and increases remanent polarization (Pr), in accompany with the decrease in coercive force (Ec), for the PZT films. The best properties obtained are : Pr= 14.8 μ C/cm2 and Ec=104.2 kV/cm.",

author = "Lin, {Cheng Hsiung} and Hsu, {Wen Dung} and Lin, {I. Nan}",

note = "Funding Information: Acknowledgements Financial support From the National Science Council of R.O.C. (no. NSC 88-",

year = "1999",

doi = "10.1080/10584589908210181",

language = "English",

volume = "25",

pages = "311--318",

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T1 - Effect of excess-Pb on ferroelectric properties of Pb(Zr0.52Ti0.48)O3 thin films prepared by metal-organic decomposition process

AU - Lin, Cheng Hsiung

AU - Hsu, Wen Dung

AU - Lin, I. Nan

N1 - Funding Information: Acknowledgements Financial support From the National Science Council of R.O.C. (no. NSC 88-

PY - 1999

Y1 - 1999

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AB - The Pb(Zr0.52Tio 43)03. PZT, thin films with good ferroelectric properties and leakage behavior are obtained by metal-organic decomposition (MOD) process. Stringent control in post-annealing process is required to circumvent the deleterious effect on electrical properties induced by the loss of Pb-species. Incorporation of excess-Pb species in precursors further effectively suppresses the leakage current (JL) and increases remanent polarization (Pr), in accompany with the decrease in coercive force (Ec), for the PZT films. The best properties obtained are : Pr= 14.8 μ C/cm2 and Ec=104.2 kV/cm.

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Effect of excess-Pb on ferroelectric properties of Pb(Zr_0.52Ti_0.48)O₃ thin films prepared by metal-organic decomposition process

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