Effect of graded triple delta-doped sheets on the performance of GaAs based dual channel pseudomorphic high electron mobility transistors

Kuei Yi Chu, Shiou Ying Cheng, Meng Hsueh Chiang, Yi Jung Liu, Chien Chang Huang, Tai You Chen, Chi Shiang Hsu, Wen Chau Liu, Wen Yu Cheng, Bin Cian Lin

Research output: Contribution to journalArticle

Abstract

The characteristics of InGaP/InGaAs/GaAs dual channel pseudomorphic high electron mobility transistors (DCPHEMTs) with different graded triple delta-doped sheets are investigated and experimentally demonstrated. Based on a two-dimensional simulator of ATLAS, the band diagrams, electron densities and DC characteristics of studied devices are comprehensively analyzed. Due to the use of properly graded triple delta-doped sheets, good pinch-off and saturation characteristics, improved transport properties and wide current swing are obtained. For comparison, a practical DCPHEMT with good device performances is fabricated as well. It is found that the simulated data are in good agreement with experimental results.

Original languageEnglish
Pages (from-to)289-295
Number of pages7
JournalSuperlattices and Microstructures
Volume50
Issue number4
DOIs
Publication statusPublished - 2011 Oct 1

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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