The characteristics of InGaP/InGaAs/GaAs dual channel pseudomorphic high electron mobility transistors (DCPHEMTs) with different graded triple delta-doped sheets are investigated and experimentally demonstrated. Based on a two-dimensional simulator of ATLAS, the band diagrams, electron densities and DC characteristics of studied devices are comprehensively analyzed. Due to the use of properly graded triple delta-doped sheets, good pinch-off and saturation characteristics, improved transport properties and wide current swing are obtained. For comparison, a practical DCPHEMT with good device performances is fabricated as well. It is found that the simulated data are in good agreement with experimental results.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Electrical and Electronic Engineering