Effect of growth temperature on the indium incorporation in ingan epitaxial films

P. C. Chang, C. L. Yu, Y. W. Jahn, S. J. Chang, K. H. Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

InxGa1-xN epilayers have been grown by metalorganic chemical vapor deposition (MOCVD) at different temperatures between 740°C to 830°C. The thickness of InGaN film is 50nm for all samples. The incorporation of indium is found to increase with decreasing grown temperature. The optical properties and film quality of the samples have been investigated by photoluminescence (PL) system and X-ray diffraction (XRD). The Full Width at Half Maximum (FWHM) of PL and XRD decreases with increasing the grown temperature. We also found that the peak emission of PL shifts with changing the grown temperature. The effect of temperature on the film properties was determined. This understanding will lead to better quality control of the optoelectronic devices.

Original languageEnglish
Title of host publicationApplications of Engineering Materials
Pages1456-1459
Number of pages4
DOIs
Publication statusPublished - 2011 Aug 12
Event2011 International Conference on Advanced Engineering Materials and Technology, AEMT 2011 - Sanya, China
Duration: 2011 Jul 292011 Jul 31

Publication series

NameAdvanced Materials Research
Volume287-290
ISSN (Print)1022-6680

Other

Other2011 International Conference on Advanced Engineering Materials and Technology, AEMT 2011
CountryChina
CitySanya
Period11-07-2911-07-31

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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