Effect of H2 addition on SiCN film growth in an electron cyclotron resonance plasma chemical vapor deposition reactor

Jih Jen Wu; Kuei Hsien Chen; Cheng Yen Wen; Li Chyong Chen; Juen Kai Wang; Yueh Chung Yu; Chang Wan Wang; Erh Kang Lin

doi:10.1039/a908523h

Effect of H₂ addition on SiCN film growth in an electron cyclotron resonance plasma chemical vapor deposition reactor

Jih Jen Wu, Kuei Hsien Chen, Cheng Yen Wen, Li Chyong Chen, Juen Kai Wang, Yueh Chung Yu, Chang Wan Wang, Erh Kang Lin

Department of Chemical Engineering

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

The effect of H₂ addition on SiCN film growth was studied in an electron cyclotron resonance plasma chemical vapor deposition reactor. No carbon incorporation was observed in the film by feeding CH₄/SiH₄/N₂ even at CH₄: SiH₄ ratios as high as 150:1. With H₂ addition and at a CH₄. SiH₄ ratio of 100:1 and above, the carbon contents within the films increased significantly. Possible explanations for this behavior involve gas phase and surface reactions of hydrogen including formation of active carbon species in the gas phase by hydrogen abstraction reactions and preferential etching of surface-bonded carbons.

Original language	English
Pages (from-to)	783-787
Number of pages	5
Journal	Journal of Materials Chemistry
Volume	10
Issue number	3
DOIs	https://doi.org/10.1039/a908523h
Publication status	Published - 2000

All Science Journal Classification (ASJC) codes

Chemistry(all)
Materials Chemistry

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title = "Effect of H2 addition on SiCN film growth in an electron cyclotron resonance plasma chemical vapor deposition reactor",

abstract = "The effect of H2 addition on SiCN film growth was studied in an electron cyclotron resonance plasma chemical vapor deposition reactor. No carbon incorporation was observed in the film by feeding CH4/SiH4/N2 even at CH4: SiH4 ratios as high as 150:1. With H2 addition and at a CH4. SiH4 ratio of 100:1 and above, the carbon contents within the films increased significantly. Possible explanations for this behavior involve gas phase and surface reactions of hydrogen including formation of active carbon species in the gas phase by hydrogen abstraction reactions and preferential etching of surface-bonded carbons.",

author = "Wu, {Jih Jen} and Chen, {Kuei Hsien} and Wen, {Cheng Yen} and Chen, {Li Chyong} and Wang, {Juen Kai} and Yu, {Yueh Chung} and Wang, {Chang Wan} and Lin, {Erh Kang}",

year = "2000",

doi = "10.1039/a908523h",

language = "English",

volume = "10",

pages = "783--787",

journal = "Journal of Materials Chemistry",

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publisher = "Royal Society of Chemistry",

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T1 - Effect of H2 addition on SiCN film growth in an electron cyclotron resonance plasma chemical vapor deposition reactor

AU - Wu, Jih Jen

AU - Chen, Kuei Hsien

AU - Wen, Cheng Yen

AU - Chen, Li Chyong

AU - Wang, Juen Kai

AU - Yu, Yueh Chung

AU - Wang, Chang Wan

AU - Lin, Erh Kang

PY - 2000

Y1 - 2000

N2 - The effect of H2 addition on SiCN film growth was studied in an electron cyclotron resonance plasma chemical vapor deposition reactor. No carbon incorporation was observed in the film by feeding CH4/SiH4/N2 even at CH4: SiH4 ratios as high as 150:1. With H2 addition and at a CH4. SiH4 ratio of 100:1 and above, the carbon contents within the films increased significantly. Possible explanations for this behavior involve gas phase and surface reactions of hydrogen including formation of active carbon species in the gas phase by hydrogen abstraction reactions and preferential etching of surface-bonded carbons.

AB - The effect of H2 addition on SiCN film growth was studied in an electron cyclotron resonance plasma chemical vapor deposition reactor. No carbon incorporation was observed in the film by feeding CH4/SiH4/N2 even at CH4: SiH4 ratios as high as 150:1. With H2 addition and at a CH4. SiH4 ratio of 100:1 and above, the carbon contents within the films increased significantly. Possible explanations for this behavior involve gas phase and surface reactions of hydrogen including formation of active carbon species in the gas phase by hydrogen abstraction reactions and preferential etching of surface-bonded carbons.

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DO - 10.1039/a908523h

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JO - Journal of Materials Chemistry

JF - Journal of Materials Chemistry

IS - 3

ER -

Effect of H₂ addition on SiCN film growth in an electron cyclotron resonance plasma chemical vapor deposition reactor

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