Effect of H2 addition on SiCN film growth in an electron cyclotron resonance plasma chemical vapor deposition reactor

Jih Jen Wu, Kuei Hsien Chen, Cheng Yen Wen, Li Chyong Chen, Juen Kai Wang, Yueh Chung Yu, Chang Wan Wang, Erh Kang Lin

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

The effect of H2 addition on SiCN film growth was studied in an electron cyclotron resonance plasma chemical vapor deposition reactor. No carbon incorporation was observed in the film by feeding CH4/SiH4/N2 even at CH4: SiH4 ratios as high as 150:1. With H2 addition and at a CH4. SiH4 ratio of 100:1 and above, the carbon contents within the films increased significantly. Possible explanations for this behavior involve gas phase and surface reactions of hydrogen including formation of active carbon species in the gas phase by hydrogen abstraction reactions and preferential etching of surface-bonded carbons.

Original languageEnglish
Pages (from-to)783-787
Number of pages5
JournalJournal of Materials Chemistry
Volume10
Issue number3
DOIs
Publication statusPublished - 2000

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

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