TY - GEN
T1 - Effect of in addition on Sn-Ag-Sb lead-free solder system
AU - Lee, Hwa Teng
AU - Lee, Fok Foo
AU - Hong, Ting Fu
AU - Chen, Hsiao Wei
PY - 2008
Y1 - 2008
N2 - The present study investigates the effect of 1-5wt.% Indium additions on microstructure, properties and interfacial IMC's formation of Sn-3Ag-2Sb(SAS) lead-free solder alloys. Experimental results show that addition of indium results in formation of intermetallic compounds of Ag-Sn-In phase and InSb phase. Sn atoms in Ag Sn compound formed originally in Sn-Ag solder system are replaced by In atoms in SAS-xln solder system as indium content is increased. A structural and morphological transformation ofAg 3n), Ag 2 (Sn,ln) and finally to Ag 2 (In,Sn) is confirmed. Meanwhile, transformation of interfacial Cu 6Sn 5 IMC layer to CU 6 (Sn,ln)s is progressed as the level of In content is increased and accelerated by thermal storage as well.
AB - The present study investigates the effect of 1-5wt.% Indium additions on microstructure, properties and interfacial IMC's formation of Sn-3Ag-2Sb(SAS) lead-free solder alloys. Experimental results show that addition of indium results in formation of intermetallic compounds of Ag-Sn-In phase and InSb phase. Sn atoms in Ag Sn compound formed originally in Sn-Ag solder system are replaced by In atoms in SAS-xln solder system as indium content is increased. A structural and morphological transformation ofAg 3n), Ag 2 (Sn,ln) and finally to Ag 2 (In,Sn) is confirmed. Meanwhile, transformation of interfacial Cu 6Sn 5 IMC layer to CU 6 (Sn,ln)s is progressed as the level of In content is increased and accelerated by thermal storage as well.
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U2 - 10.1109/EMAP.2008.4784261
DO - 10.1109/EMAP.2008.4784261
M3 - Conference contribution
AN - SCOPUS:64049113569
SN - 9781424436217
T3 - 2008 10th International Conference on Electronic Materials and Packaging, EMAP 2008
SP - 191
EP - 194
BT - 2008 10th International Conference on Electronic Materials and Packaging, EMAP 2008
T2 - 2008 10th International Conference on Electronic Materials and Packaging, EMAP 2008
Y2 - 22 October 2008 through 24 October 2008
ER -