TY - JOUR
T1 - Effect of indium concentration on luminescence and electrical properties of indium doped ZnO nanowires
AU - Lim, Sin Yee
AU - Brahma, Sanjaya
AU - Liu, Chuan Pu
AU - Wang, Ruey Chi
AU - Huang, Jow Lay
N1 - Funding Information:
The authors would like to thank the National Science Council of Taiwan, Republic of China , for its financial support under Contract No. NSC 96-2221-E-006-123-MY .
PY - 2013/12/31
Y1 - 2013/12/31
N2 - In this work, indium (In) doped ZnO nanowires are grown on a Si substrate by chemical vapor deposition (CVD), at a relatively low temperature of 550 C. The effects of In concentration on the morphology, microstructure, luminescence and electrical properties of ZnO nanowires are investigated. The diameters and lengths of these nanowires are in the ranges of 70-311 nm and 10-15 μm, respectively. These nanowires are single crystals growing in the [0001] direction. The maximum solubility of In in ZnO is estimated to be 3.47 at.%. Photoluminescence (PL) spectra reveal a red shift in the ultraviolet emission and intensity enhancement in the green emission with increasing indium doping concentration. Besides, carrier concentration, mobility and resistivity of the nanowires with different doping concentrations are determined based on single-nanowire field effect transistors (FET).
AB - In this work, indium (In) doped ZnO nanowires are grown on a Si substrate by chemical vapor deposition (CVD), at a relatively low temperature of 550 C. The effects of In concentration on the morphology, microstructure, luminescence and electrical properties of ZnO nanowires are investigated. The diameters and lengths of these nanowires are in the ranges of 70-311 nm and 10-15 μm, respectively. These nanowires are single crystals growing in the [0001] direction. The maximum solubility of In in ZnO is estimated to be 3.47 at.%. Photoluminescence (PL) spectra reveal a red shift in the ultraviolet emission and intensity enhancement in the green emission with increasing indium doping concentration. Besides, carrier concentration, mobility and resistivity of the nanowires with different doping concentrations are determined based on single-nanowire field effect transistors (FET).
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U2 - 10.1016/j.tsf.2013.09.001
DO - 10.1016/j.tsf.2013.09.001
M3 - Article
AN - SCOPUS:84888642662
SN - 0040-6090
VL - 549
SP - 165
EP - 171
JO - Thin Solid Films
JF - Thin Solid Films
ER -