Effect of indium concentration on luminescence and electrical properties of indium doped ZnO nanowires

Sin Yee Lim; Sanjaya Brahma; Chuan Pu Liu; Ruey Chi Wang; Jow Lay Huang

doi:10.1016/j.tsf.2013.09.001

Effect of indium concentration on luminescence and electrical properties of indium doped ZnO nanowires

Sin Yee Lim
, Sanjaya Brahma
, Chuan Pu Liu
, Ruey Chi Wang
, Jow Lay Huang

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

In this work, indium (In) doped ZnO nanowires are grown on a Si substrate by chemical vapor deposition (CVD), at a relatively low temperature of 550 C. The effects of In concentration on the morphology, microstructure, luminescence and electrical properties of ZnO nanowires are investigated. The diameters and lengths of these nanowires are in the ranges of 70-311 nm and 10-15 μm, respectively. These nanowires are single crystals growing in the [0001] direction. The maximum solubility of In in ZnO is estimated to be 3.47 at.%. Photoluminescence (PL) spectra reveal a red shift in the ultraviolet emission and intensity enhancement in the green emission with increasing indium doping concentration. Besides, carrier concentration, mobility and resistivity of the nanowires with different doping concentrations are determined based on single-nanowire field effect transistors (FET).

Original language	English
Pages (from-to)	165-171
Number of pages	7
Journal	Thin Solid Films
Volume	549
DOIs	https://doi.org/10.1016/j.tsf.2013.09.001
Publication status	Published - 2013 Dec 31

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2013.09.001

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@article{c1ebd6af4fb841409be4bd65ccdb6da9,

title = "Effect of indium concentration on luminescence and electrical properties of indium doped ZnO nanowires",

abstract = "In this work, indium (In) doped ZnO nanowires are grown on a Si substrate by chemical vapor deposition (CVD), at a relatively low temperature of 550 C. The effects of In concentration on the morphology, microstructure, luminescence and electrical properties of ZnO nanowires are investigated. The diameters and lengths of these nanowires are in the ranges of 70-311 nm and 10-15 μm, respectively. These nanowires are single crystals growing in the [0001] direction. The maximum solubility of In in ZnO is estimated to be 3.47 at.\%. Photoluminescence (PL) spectra reveal a red shift in the ultraviolet emission and intensity enhancement in the green emission with increasing indium doping concentration. Besides, carrier concentration, mobility and resistivity of the nanowires with different doping concentrations are determined based on single-nanowire field effect transistors (FET).",

author = "Lim, \{Sin Yee\} and Sanjaya Brahma and Liu, \{Chuan Pu\} and Wang, \{Ruey Chi\} and Huang, \{Jow Lay\}",

note = "Funding Information: The authors would like to thank the National Science Council of Taiwan, Republic of China , for its financial support under Contract No. NSC 96-2221-E-006-123-MY .",

year = "2013",

month = dec,

day = "31",

doi = "10.1016/j.tsf.2013.09.001",

language = "English",

volume = "549",

pages = "165--171",

journal = "Thin Solid Films",

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publisher = "Elsevier BV",

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TY - JOUR

T1 - Effect of indium concentration on luminescence and electrical properties of indium doped ZnO nanowires

AU - Lim, Sin Yee

AU - Brahma, Sanjaya

AU - Liu, Chuan Pu

AU - Wang, Ruey Chi

AU - Huang, Jow Lay

N1 - Funding Information: The authors would like to thank the National Science Council of Taiwan, Republic of China , for its financial support under Contract No. NSC 96-2221-E-006-123-MY .

PY - 2013/12/31

Y1 - 2013/12/31

N2 - In this work, indium (In) doped ZnO nanowires are grown on a Si substrate by chemical vapor deposition (CVD), at a relatively low temperature of 550 C. The effects of In concentration on the morphology, microstructure, luminescence and electrical properties of ZnO nanowires are investigated. The diameters and lengths of these nanowires are in the ranges of 70-311 nm and 10-15 μm, respectively. These nanowires are single crystals growing in the [0001] direction. The maximum solubility of In in ZnO is estimated to be 3.47 at.%. Photoluminescence (PL) spectra reveal a red shift in the ultraviolet emission and intensity enhancement in the green emission with increasing indium doping concentration. Besides, carrier concentration, mobility and resistivity of the nanowires with different doping concentrations are determined based on single-nanowire field effect transistors (FET).

AB - In this work, indium (In) doped ZnO nanowires are grown on a Si substrate by chemical vapor deposition (CVD), at a relatively low temperature of 550 C. The effects of In concentration on the morphology, microstructure, luminescence and electrical properties of ZnO nanowires are investigated. The diameters and lengths of these nanowires are in the ranges of 70-311 nm and 10-15 μm, respectively. These nanowires are single crystals growing in the [0001] direction. The maximum solubility of In in ZnO is estimated to be 3.47 at.%. Photoluminescence (PL) spectra reveal a red shift in the ultraviolet emission and intensity enhancement in the green emission with increasing indium doping concentration. Besides, carrier concentration, mobility and resistivity of the nanowires with different doping concentrations are determined based on single-nanowire field effect transistors (FET).

UR - https://www.scopus.com/pages/publications/84888642662

UR - https://www.scopus.com/pages/publications/84888642662#tab=citedBy

U2 - 10.1016/j.tsf.2013.09.001

DO - 10.1016/j.tsf.2013.09.001

M3 - Article

AN - SCOPUS:84888642662

SN - 0040-6090

VL - 549

SP - 165

EP - 171

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Effect of indium concentration on luminescence and electrical properties of indium doped ZnO nanowires

Abstract

All Science Journal Classification (ASJC) codes

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