Effect of lattice transformation on the pressure dependence of Tc of V3Si single crystals

S. Huang, C. W. Chu

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

The superconducting transition temperature Tc has been measured under hydrostatic pressure up to 18 kbar on both transforming and nontransforming V3Si single crystals. dTcdp was found to be always positive, but about 30% smaller for the nontransforming samples. The results are compared with predictions based on previous elastic-modulus measurements under pressure.

Original languageEnglish
Pages (from-to)4030-4032
Number of pages3
JournalPhysical Review B
Volume10
Issue number9
DOIs
Publication statusPublished - 1974

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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