Effect of main gas and carrier gas on ZnO thin films deposited by atmospheric pressure plasma jet

Tung Sheng Chou; Hsin Tien Lin; Yu Yi Chen; Kuo Long Pan; Jia Yang Juang

doi:10.1016/j.tsf.2015.05.050

Effect of main gas and carrier gas on ZnO thin films deposited by atmospheric pressure plasma jet

Tung Sheng Chou, Hsin Tien Lin, Yu Yi Chen, Kuo Long Pan, Jia Yang Juang

Department of Environmental Engineering

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

The effect of main gas flow rate and gas type of carrier gas on the electrical and optical properties of Ga-doped ZnO films deposited by atmospheric pressure plasma jet was investigated. Adding Ar and H₂ in the carrier gas reduces the sheet resistance of the films from 230 to 90 Ω/□ and increases the deposition rate by 38% due to the incorporation of hydrogen as a shallow donor and the lower breakdown potential of Ar, respectively. The effect of the main gas flow rate is less significant compared with the gas type of the carrier gas, but a proper flow rate is required to produce the film with lower resistivity. The lowest resistivity of 1.25 × 10^{- 3} Ω cm was achieved with a carrier gas mixture percentage of 75% and a main gas flow rate of 30 slm at a substrate temperature of 180 °C in open air. All the samples presented in this study exhibit average transmittance above 80% in the visible region and low haze below 5.5%.

Original language	English
Pages (from-to)	282-286
Number of pages	5
Journal	Thin Solid Films
Volume	594
DOIs	https://doi.org/10.1016/j.tsf.2015.05.050
Publication status	Published - 2015 Nov 2

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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title = "Effect of main gas and carrier gas on ZnO thin films deposited by atmospheric pressure plasma jet",

abstract = "The effect of main gas flow rate and gas type of carrier gas on the electrical and optical properties of Ga-doped ZnO films deposited by atmospheric pressure plasma jet was investigated. Adding Ar and H2 in the carrier gas reduces the sheet resistance of the films from 230 to 90 Ω/□ and increases the deposition rate by 38% due to the incorporation of hydrogen as a shallow donor and the lower breakdown potential of Ar, respectively. The effect of the main gas flow rate is less significant compared with the gas type of the carrier gas, but a proper flow rate is required to produce the film with lower resistivity. The lowest resistivity of 1.25 × 10- 3 Ω cm was achieved with a carrier gas mixture percentage of 75% and a main gas flow rate of 30 slm at a substrate temperature of 180 °C in open air. All the samples presented in this study exhibit average transmittance above 80% in the visible region and low haze below 5.5%.",

author = "Chou, {Tung Sheng} and Lin, {Hsin Tien} and Chen, {Yu Yi} and Pan, {Kuo Long} and Juang, {Jia Yang}",

note = "Funding Information: This work is supported by Industrial Technology Research Institute (ITRI) ( 101H33009C ), National Taiwan University ( NTU-CDP-10R70855 ) and the National Science Council Taiwan ( 101-2221-E-002-078 and 102-2221-E-002-178 ). This work won Lam Research Award. We thank Prof. I-Chun Cheng, Prof. Jian-Zhang Chen, and Dr. Li Xu for their helpful discussion. We thank Jiuan-Ren Jei of ITRI for technical supports of APPJ. Publisher Copyright: {\textcopyright} 2015 Elsevier B.V.",

year = "2015",

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doi = "10.1016/j.tsf.2015.05.050",

language = "English",

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T1 - Effect of main gas and carrier gas on ZnO thin films deposited by atmospheric pressure plasma jet

AU - Chou, Tung Sheng

AU - Lin, Hsin Tien

AU - Chen, Yu Yi

AU - Pan, Kuo Long

AU - Juang, Jia Yang

N1 - Funding Information: This work is supported by Industrial Technology Research Institute (ITRI) ( 101H33009C ), National Taiwan University ( NTU-CDP-10R70855 ) and the National Science Council Taiwan ( 101-2221-E-002-078 and 102-2221-E-002-178 ). This work won Lam Research Award. We thank Prof. I-Chun Cheng, Prof. Jian-Zhang Chen, and Dr. Li Xu for their helpful discussion. We thank Jiuan-Ren Jei of ITRI for technical supports of APPJ. Publisher Copyright: © 2015 Elsevier B.V.

PY - 2015/11/2

Y1 - 2015/11/2

N2 - The effect of main gas flow rate and gas type of carrier gas on the electrical and optical properties of Ga-doped ZnO films deposited by atmospheric pressure plasma jet was investigated. Adding Ar and H2 in the carrier gas reduces the sheet resistance of the films from 230 to 90 Ω/□ and increases the deposition rate by 38% due to the incorporation of hydrogen as a shallow donor and the lower breakdown potential of Ar, respectively. The effect of the main gas flow rate is less significant compared with the gas type of the carrier gas, but a proper flow rate is required to produce the film with lower resistivity. The lowest resistivity of 1.25 × 10- 3 Ω cm was achieved with a carrier gas mixture percentage of 75% and a main gas flow rate of 30 slm at a substrate temperature of 180 °C in open air. All the samples presented in this study exhibit average transmittance above 80% in the visible region and low haze below 5.5%.

AB - The effect of main gas flow rate and gas type of carrier gas on the electrical and optical properties of Ga-doped ZnO films deposited by atmospheric pressure plasma jet was investigated. Adding Ar and H2 in the carrier gas reduces the sheet resistance of the films from 230 to 90 Ω/□ and increases the deposition rate by 38% due to the incorporation of hydrogen as a shallow donor and the lower breakdown potential of Ar, respectively. The effect of the main gas flow rate is less significant compared with the gas type of the carrier gas, but a proper flow rate is required to produce the film with lower resistivity. The lowest resistivity of 1.25 × 10- 3 Ω cm was achieved with a carrier gas mixture percentage of 75% and a main gas flow rate of 30 slm at a substrate temperature of 180 °C in open air. All the samples presented in this study exhibit average transmittance above 80% in the visible region and low haze below 5.5%.

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Effect of main gas and carrier gas on ZnO thin films deposited by atmospheric pressure plasma jet

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