Effect of microstructures on the electrical and optoelectronic properties of nanocrystalline Ta-Si-N thin films by reactive magnetron cosputtering

C. K. Chung; T. S. Chen

doi:10.1016/j.scriptamat.2007.06.011

Effect of microstructures on the electrical and optoelectronic properties of nanocrystalline Ta-Si-N thin films by reactive magnetron cosputtering

C. K. Chung, T. S. Chen

Department of Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

The evolution of an amorphous-like to a polycrystalline microstructure and the composition of Ta-Si-N nanocomposites was controlled by nitrogen flow ratios during reactive cosputtering. It influences the chemical bonding, electrical resistivity and optoelectronic luminescent properties of Ta-Si-N films. Amorphous-like Ta-Si-N films formed at a Si/(Si + Ta) ratio larger than 6% had much finer grains, smoother morphology, lower Ta 4f^7/2 binding energy and lower resistivity compared to polycrystalline films. A strong visible photoluminescence was observed at Ta₅₃Si₇N₄₀ compositions for a peak maximum at 554 nm (2.24 eV).

Original language	English
Pages (from-to)	611-614
Number of pages	4
Journal	Scripta Materialia
Volume	57
Issue number	7
DOIs	https://doi.org/10.1016/j.scriptamat.2007.06.011
Publication status	Published - 2007 Oct

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys

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10.1016/j.scriptamat.2007.06.011

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@article{2e8ec67ffb8d4f5f95666f3dbb2bc1e0,

title = "Effect of microstructures on the electrical and optoelectronic properties of nanocrystalline Ta-Si-N thin films by reactive magnetron cosputtering",

abstract = "The evolution of an amorphous-like to a polycrystalline microstructure and the composition of Ta-Si-N nanocomposites was controlled by nitrogen flow ratios during reactive cosputtering. It influences the chemical bonding, electrical resistivity and optoelectronic luminescent properties of Ta-Si-N films. Amorphous-like Ta-Si-N films formed at a Si/(Si + Ta) ratio larger than 6% had much finer grains, smoother morphology, lower Ta 4f7/2 binding energy and lower resistivity compared to polycrystalline films. A strong visible photoluminescence was observed at Ta53Si7N40 compositions for a peak maximum at 554 nm (2.24 eV).",

author = "Chung, {C. K.} and Chen, {T. S.}",

note = "Funding Information: This work is partially sponsored by National Science Council under Grant Nos. NSC 94-2212-E-006-055 and 95-2221-E-006-047-MY3. We give our great thanks to the Center for Micro/Nano Science and Technology (CMNST) and the Center for Precious Instruments in National Cheng Kung University (NCKU), Tainan, Taiwan, for access to analysis equipment and technical support.",

year = "2007",

month = oct,

doi = "10.1016/j.scriptamat.2007.06.011",

language = "English",

volume = "57",

pages = "611--614",

journal = "Scripta Materialia",

issn = "1359-6462",

publisher = "Elsevier Limited",

number = "7",

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T1 - Effect of microstructures on the electrical and optoelectronic properties of nanocrystalline Ta-Si-N thin films by reactive magnetron cosputtering

AU - Chung, C. K.

AU - Chen, T. S.

N1 - Funding Information: This work is partially sponsored by National Science Council under Grant Nos. NSC 94-2212-E-006-055 and 95-2221-E-006-047-MY3. We give our great thanks to the Center for Micro/Nano Science and Technology (CMNST) and the Center for Precious Instruments in National Cheng Kung University (NCKU), Tainan, Taiwan, for access to analysis equipment and technical support.

PY - 2007/10

Y1 - 2007/10

N2 - The evolution of an amorphous-like to a polycrystalline microstructure and the composition of Ta-Si-N nanocomposites was controlled by nitrogen flow ratios during reactive cosputtering. It influences the chemical bonding, electrical resistivity and optoelectronic luminescent properties of Ta-Si-N films. Amorphous-like Ta-Si-N films formed at a Si/(Si + Ta) ratio larger than 6% had much finer grains, smoother morphology, lower Ta 4f7/2 binding energy and lower resistivity compared to polycrystalline films. A strong visible photoluminescence was observed at Ta53Si7N40 compositions for a peak maximum at 554 nm (2.24 eV).

AB - The evolution of an amorphous-like to a polycrystalline microstructure and the composition of Ta-Si-N nanocomposites was controlled by nitrogen flow ratios during reactive cosputtering. It influences the chemical bonding, electrical resistivity and optoelectronic luminescent properties of Ta-Si-N films. Amorphous-like Ta-Si-N films formed at a Si/(Si + Ta) ratio larger than 6% had much finer grains, smoother morphology, lower Ta 4f7/2 binding energy and lower resistivity compared to polycrystalline films. A strong visible photoluminescence was observed at Ta53Si7N40 compositions for a peak maximum at 554 nm (2.24 eV).

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DO - 10.1016/j.scriptamat.2007.06.011

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VL - 57

SP - 611

EP - 614

JO - Scripta Materialia

JF - Scripta Materialia

SN - 1359-6462

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Effect of microstructures on the electrical and optoelectronic properties of nanocrystalline Ta-Si-N thin films by reactive magnetron cosputtering

Abstract

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