Effect of microstructures on the electrical and optoelectronic properties of nanocrystalline Ta-Si-N thin films by reactive magnetron cosputtering

C. K. Chung, T. S. Chen

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)

Abstract

The evolution of an amorphous-like to a polycrystalline microstructure and the composition of Ta-Si-N nanocomposites was controlled by nitrogen flow ratios during reactive cosputtering. It influences the chemical bonding, electrical resistivity and optoelectronic luminescent properties of Ta-Si-N films. Amorphous-like Ta-Si-N films formed at a Si/(Si + Ta) ratio larger than 6% had much finer grains, smoother morphology, lower Ta 4f7/2 binding energy and lower resistivity compared to polycrystalline films. A strong visible photoluminescence was observed at Ta53Si7N40 compositions for a peak maximum at 554 nm (2.24 eV).

Original languageEnglish
Pages (from-to)611-614
Number of pages4
JournalScripta Materialia
Volume57
Issue number7
DOIs
Publication statusPublished - 2007 Oct 1

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys

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