Effect of nanocomposite gate-dielectric properties on pentacene microstructure and field-effect transistor characteristics

Wen Hsi Lee, Chun Chieh Wang

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

In this study, the effect of surface energy and roughness of the nanocomposite gate dielectric on pentacene morphology and electrical properties of pentacene OTFT are reported. Nanoparticles Ti0 2 were added in the polyimide matrix to form a nanocomposite which has a significantly different surface characteristic from polyimide, leading to a discrepancy in the structural properties of pentacene growth. A growth mode of pentacene deposited on the nanocomposite is proposed to explain successfully the effect of surface properties of nanocomposite gate dielectric such as surface energy and roughness on the pentacene morphology and electrical properties of OTFT. To obtain the lower surface energy and smoother surface of nanocomposite gate dielectric that is responsible for the desired crystalline, microstructure of pentacene and electrical properties of device, a bottom contact OTFT-pentacene deposited on the double-layer nanocomposite gate dielectric consisting of top smoothing layer of the neat polyimide and bottom layer of (PI+ nano-TiO z particles) nanocomposite has been successfully demonstrated to exhibit very promising performance including high current on to off ratio of about 6 × 10 5, threshold voltage of-10 V and moderately high filed mobility of 0.15 cm 2V -1s -1.

Original languageEnglish
Pages (from-to)762-769
Number of pages8
JournalJournal of Nanoscience and Nanotechnology
Volume10
Issue number2
DOIs
Publication statusPublished - 2010 Feb 1

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • General Chemistry
  • Biomedical Engineering
  • General Materials Science
  • Condensed Matter Physics

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