Effect of nanocomposite gate dielectric roughness on pentacene field-effect transistor

Wen-Shi Lee, C. C. Wang

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)

Abstract

The effects of the surface roughness of the nanocomposite gate dielectric on the correlation between grain size and mobility of pentacene organic thin-film transistors were investigated. In this work, the nanocomposite as gate dielectric film was carried out by blending polyimide and nano- Ti O 2 particles to enhance the capacitance of the gate dielectric. The roughness of the nanocomposite gate dielectric is varied from 0.8 to 20 nm with increasing Ti O2 concentration from 0 to 5 vol % in polyimide. Grain size of pentacene decreases with increasing roughness of the nanocomposite gate dielectric film. Two distinguishable regions are observed on the correlation between grain size and mobility of pentacene. In region (I), the nanocomposite gate dielectric with 0-2 vol % Ti O2 content shows that mobility does not significant change with decreasing grain size of pentacene, similar to the behavior of the organic polymer gate dielectric. In region (II), the nanocomposite gate dielectric with 3-5 vol % Ti O2 content shows that mobility is remarkably decreased with decreasing grain size of pentacene, similar to the behavior of the inorganic gate dielectric.

Original languageEnglish
Pages (from-to)1116-1121
Number of pages6
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume27
Issue number3
DOIs
Publication statusPublished - 2009 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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