Effect of NDD dosage on hot-carrier reliability in DMOS transistors

Jone-Fang Chen; Kuen Shiuan Tian; Shiang Yu Chen; Kuo Ming Wu; C. M. Liu

doi:10.1109/ISQED.2009.4810298

Effect of NDD dosage on hot-carrier reliability in DMOS transistors

Jone-Fang Chen, Kuen Shiuan Tian, Shiang Yu Chen, Kuo Ming Wu, C. M. Liu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

The hot-carrier reliability of high-voltage n-channel DMOS transistors with various dosage of n-type double diffusion (NDD) implant is investigated. Higher NDD dosage results in higher substrate current, however, on-resistance (Ron) degradation is lower. TCAD simulation suggests that hot-hole injection and trapping is responsible for this unexpected lower Ron degradation.

Original language	English
Title of host publication	Proceedings of the 10th International Symposium on Quality Electronic Design, ISQED 2009
Pages	226-229
Number of pages	4
DOIs	https://doi.org/10.1109/ISQED.2009.4810298
Publication status	Published - 2009 Jul 8
Event	10th International Symposium on Quality Electronic Design, ISQED 2009 - San Jose, CA, United States Duration: 2009 Mar 16 → 2009 Mar 18

Publication series

Name	Proceedings of the 10th International Symposium on Quality Electronic Design, ISQED 2009

Other

Other	10th International Symposium on Quality Electronic Design, ISQED 2009
Country/Territory	United States
City	San Jose, CA
Period	09-03-16 → 09-03-18

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering

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10.1109/ISQED.2009.4810298

Cite this

Chen, J-F., Tian, K. S., Chen, S. Y., Wu, K. M., & Liu, C. M. (2009). Effect of NDD dosage on hot-carrier reliability in DMOS transistors. In Proceedings of the 10th International Symposium on Quality Electronic Design, ISQED 2009 (pp. 226-229). [4810298] (Proceedings of the 10th International Symposium on Quality Electronic Design, ISQED 2009). https://doi.org/10.1109/ISQED.2009.4810298

@inproceedings{f54ae1c2ff384b4097e73ef2f04845c6,

title = "Effect of NDD dosage on hot-carrier reliability in DMOS transistors",

abstract = "The hot-carrier reliability of high-voltage n-channel DMOS transistors with various dosage of n-type double diffusion (NDD) implant is investigated. Higher NDD dosage results in higher substrate current, however, on-resistance (Ron) degradation is lower. TCAD simulation suggests that hot-hole injection and trapping is responsible for this unexpected lower Ron degradation.",

author = "Jone-Fang Chen and Tian, {Kuen Shiuan} and Chen, {Shiang Yu} and Wu, {Kuo Ming} and Liu, {C. M.}",

year = "2009",

month = jul,

day = "8",

doi = "10.1109/ISQED.2009.4810298",

language = "English",

isbn = "9781424429530",

series = "Proceedings of the 10th International Symposium on Quality Electronic Design, ISQED 2009",

pages = "226--229",

booktitle = "Proceedings of the 10th International Symposium on Quality Electronic Design, ISQED 2009",

note = "10th International Symposium on Quality Electronic Design, ISQED 2009 ; Conference date: 16-03-2009 Through 18-03-2009",

}

Chen, J-F, Tian, KS, Chen, SY, Wu, KM & Liu, CM 2009, Effect of NDD dosage on hot-carrier reliability in DMOS transistors. in Proceedings of the 10th International Symposium on Quality Electronic Design, ISQED 2009., 4810298, Proceedings of the 10th International Symposium on Quality Electronic Design, ISQED 2009, pp. 226-229, 10th International Symposium on Quality Electronic Design, ISQED 2009, San Jose, CA, United States, 09-03-16. https://doi.org/10.1109/ISQED.2009.4810298

Effect of NDD dosage on hot-carrier reliability in DMOS transistors. / Chen, Jone-Fang; Tian, Kuen Shiuan; Chen, Shiang Yu et al.
Proceedings of the 10th International Symposium on Quality Electronic Design, ISQED 2009. 2009. p. 226-229 4810298 (Proceedings of the 10th International Symposium on Quality Electronic Design, ISQED 2009).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Effect of NDD dosage on hot-carrier reliability in DMOS transistors

AU - Chen, Jone-Fang

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AU - Liu, C. M.

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AB - The hot-carrier reliability of high-voltage n-channel DMOS transistors with various dosage of n-type double diffusion (NDD) implant is investigated. Higher NDD dosage results in higher substrate current, however, on-resistance (Ron) degradation is lower. TCAD simulation suggests that hot-hole injection and trapping is responsible for this unexpected lower Ron degradation.

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BT - Proceedings of the 10th International Symposium on Quality Electronic Design, ISQED 2009

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Y2 - 16 March 2009 through 18 March 2009

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Effect of NDD dosage on hot-carrier reliability in DMOS transistors

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