Effect of NDD dosage on hot-carrier reliability in DMOS transistors

Jone-Fang Chen, Kuen Shiuan Tian, Shiang Yu Chen, Kuo Ming Wu, C. M. Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

The hot-carrier reliability of high-voltage n-channel DMOS transistors with various dosage of n-type double diffusion (NDD) implant is investigated. Higher NDD dosage results in higher substrate current, however, on-resistance (Ron) degradation is lower. TCAD simulation suggests that hot-hole injection and trapping is responsible for this unexpected lower Ron degradation.

Original languageEnglish
Title of host publicationProceedings of the 10th International Symposium on Quality Electronic Design, ISQED 2009
Pages226-229
Number of pages4
DOIs
Publication statusPublished - 2009
Event10th International Symposium on Quality Electronic Design, ISQED 2009 - San Jose, CA, United States
Duration: 2009 Mar 162009 Mar 18

Other

Other10th International Symposium on Quality Electronic Design, ISQED 2009
CountryUnited States
CitySan Jose, CA
Period09-03-1609-03-18

Fingerprint

Hot carriers
Transistors
Degradation
Electric potential
Substrates

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Chen, J-F., Tian, K. S., Chen, S. Y., Wu, K. M., & Liu, C. M. (2009). Effect of NDD dosage on hot-carrier reliability in DMOS transistors. In Proceedings of the 10th International Symposium on Quality Electronic Design, ISQED 2009 (pp. 226-229). [4810298] https://doi.org/10.1109/ISQED.2009.4810298
Chen, Jone-Fang ; Tian, Kuen Shiuan ; Chen, Shiang Yu ; Wu, Kuo Ming ; Liu, C. M. / Effect of NDD dosage on hot-carrier reliability in DMOS transistors. Proceedings of the 10th International Symposium on Quality Electronic Design, ISQED 2009. 2009. pp. 226-229
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author = "Jone-Fang Chen and Tian, {Kuen Shiuan} and Chen, {Shiang Yu} and Wu, {Kuo Ming} and Liu, {C. M.}",
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Chen, J-F, Tian, KS, Chen, SY, Wu, KM & Liu, CM 2009, Effect of NDD dosage on hot-carrier reliability in DMOS transistors. in Proceedings of the 10th International Symposium on Quality Electronic Design, ISQED 2009., 4810298, pp. 226-229, 10th International Symposium on Quality Electronic Design, ISQED 2009, San Jose, CA, United States, 09-03-16. https://doi.org/10.1109/ISQED.2009.4810298

Effect of NDD dosage on hot-carrier reliability in DMOS transistors. / Chen, Jone-Fang; Tian, Kuen Shiuan; Chen, Shiang Yu; Wu, Kuo Ming; Liu, C. M.

Proceedings of the 10th International Symposium on Quality Electronic Design, ISQED 2009. 2009. p. 226-229 4810298.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Chen J-F, Tian KS, Chen SY, Wu KM, Liu CM. Effect of NDD dosage on hot-carrier reliability in DMOS transistors. In Proceedings of the 10th International Symposium on Quality Electronic Design, ISQED 2009. 2009. p. 226-229. 4810298 https://doi.org/10.1109/ISQED.2009.4810298