Effect of NDD dosage on hot-carrier reliability in DMOS transistors

Jone-Fang Chen, Kuen Shiuan Tian, Shiang Yu Chen, Kuo Ming Wu, C. M. Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

The hot-carrier reliability of high-voltage n-channel DMOS transistors with various dosage of n-type double diffusion (NDD) implant is investigated. Higher NDD dosage results in higher substrate current, however, on-resistance (Ron) degradation is lower. TCAD simulation suggests that hot-hole injection and trapping is responsible for this unexpected lower Ron degradation.

Original languageEnglish
Title of host publicationProceedings of the 10th International Symposium on Quality Electronic Design, ISQED 2009
Pages226-229
Number of pages4
DOIs
Publication statusPublished - 2009 Jul 8
Event10th International Symposium on Quality Electronic Design, ISQED 2009 - San Jose, CA, United States
Duration: 2009 Mar 162009 Mar 18

Publication series

NameProceedings of the 10th International Symposium on Quality Electronic Design, ISQED 2009

Other

Other10th International Symposium on Quality Electronic Design, ISQED 2009
Country/TerritoryUnited States
CitySan Jose, CA
Period09-03-1609-03-18

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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