Effect of NDD dosage on hot-carrier reliability in DMOS transistors

Jone-Fang Chen, Kuen Shiuan Tian, Shiang Yu Chen, Kuo Ming Wu, C. M. Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

The hot-carrier reliability of high-voltage n-channel DMOS transistors with various dosage of n-type double diffusion (NDD) implant is investigated. Higher NDD dosage results in higher substrate current, however, on-resistance (Ron) degradation is lower. TCAD simulation suggests that hot-hole injection and trapping is responsible for this unexpected lower Ron degradation.

Original languageEnglish
Title of host publicationProceedings of the 10th International Symposium on Quality Electronic Design, ISQED 2009
Pages226-229
Number of pages4
DOIs
Publication statusPublished - 2009 Jul 8
Event10th International Symposium on Quality Electronic Design, ISQED 2009 - San Jose, CA, United States
Duration: 2009 Mar 162009 Mar 18

Publication series

NameProceedings of the 10th International Symposium on Quality Electronic Design, ISQED 2009

Other

Other10th International Symposium on Quality Electronic Design, ISQED 2009
CountryUnited States
CitySan Jose, CA
Period09-03-1609-03-18

Fingerprint

Hot carriers
Transistors
Degradation
Electric potential
Substrates

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Chen, J-F., Tian, K. S., Chen, S. Y., Wu, K. M., & Liu, C. M. (2009). Effect of NDD dosage on hot-carrier reliability in DMOS transistors. In Proceedings of the 10th International Symposium on Quality Electronic Design, ISQED 2009 (pp. 226-229). [4810298] (Proceedings of the 10th International Symposium on Quality Electronic Design, ISQED 2009). https://doi.org/10.1109/ISQED.2009.4810298
Chen, Jone-Fang ; Tian, Kuen Shiuan ; Chen, Shiang Yu ; Wu, Kuo Ming ; Liu, C. M. / Effect of NDD dosage on hot-carrier reliability in DMOS transistors. Proceedings of the 10th International Symposium on Quality Electronic Design, ISQED 2009. 2009. pp. 226-229 (Proceedings of the 10th International Symposium on Quality Electronic Design, ISQED 2009).
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abstract = "The hot-carrier reliability of high-voltage n-channel DMOS transistors with various dosage of n-type double diffusion (NDD) implant is investigated. Higher NDD dosage results in higher substrate current, however, on-resistance (Ron) degradation is lower. TCAD simulation suggests that hot-hole injection and trapping is responsible for this unexpected lower Ron degradation.",
author = "Jone-Fang Chen and Tian, {Kuen Shiuan} and Chen, {Shiang Yu} and Wu, {Kuo Ming} and Liu, {C. M.}",
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Chen, J-F, Tian, KS, Chen, SY, Wu, KM & Liu, CM 2009, Effect of NDD dosage on hot-carrier reliability in DMOS transistors. in Proceedings of the 10th International Symposium on Quality Electronic Design, ISQED 2009., 4810298, Proceedings of the 10th International Symposium on Quality Electronic Design, ISQED 2009, pp. 226-229, 10th International Symposium on Quality Electronic Design, ISQED 2009, San Jose, CA, United States, 09-03-16. https://doi.org/10.1109/ISQED.2009.4810298

Effect of NDD dosage on hot-carrier reliability in DMOS transistors. / Chen, Jone-Fang; Tian, Kuen Shiuan; Chen, Shiang Yu; Wu, Kuo Ming; Liu, C. M.

Proceedings of the 10th International Symposium on Quality Electronic Design, ISQED 2009. 2009. p. 226-229 4810298 (Proceedings of the 10th International Symposium on Quality Electronic Design, ISQED 2009).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Chen J-F, Tian KS, Chen SY, Wu KM, Liu CM. Effect of NDD dosage on hot-carrier reliability in DMOS transistors. In Proceedings of the 10th International Symposium on Quality Electronic Design, ISQED 2009. 2009. p. 226-229. 4810298. (Proceedings of the 10th International Symposium on Quality Electronic Design, ISQED 2009). https://doi.org/10.1109/ISQED.2009.4810298