Effect of nickel annealing on GaN-based photodetectors

T. P. Chen; S. J. Young; Shoou-Jinn Chang; S. M. Wang; C. H. Hsiao; B. R. Huang; C. B. Yang

doi:10.1149/2.027204esl

Effect of nickel annealing on GaN-based photodetectors

T. P. Chen, S. J. Young, Shoou-Jinn Chang, S. M. Wang, C. H. Hsiao, B. R. Huang, C. B. Yang

Research output: Contribution to journal › Article

Abstract

In this study, GaN metal-semiconductor-metal (MSM) photodetectors (PDs) prepared with and without Ni treatment were fabricated. From I-V measurement, it was found that the fabricated device annealed in O ₂ ambient at 600C, 90 sec exhibited lower dark current by five orders of magnitude than conventional one. Further, it was also found that the UV-to-visible rejection ratio of GaN PDs with Ni treatment is 12146 while that of GaN MSM PDs without Ni treatment is 102. The smaller dark current and higher responsivity observed from the PD prepared with Ni treatment indicated that we could improve the performance of GaN-based MSM PDs by using Ni treatment methodology.

Original language	English
Journal	Electrochemical and Solid-State Letters
Volume	15
Issue number	4
DOIs	https://doi.org/10.1149/2.027204esl
Publication status	Published - 2012 Feb 27

All Science Journal Classification (ASJC) codes

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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title = "Effect of nickel annealing on GaN-based photodetectors",

abstract = "In this study, GaN metal-semiconductor-metal (MSM) photodetectors (PDs) prepared with and without Ni treatment were fabricated. From I-V measurement, it was found that the fabricated device annealed in O 2 ambient at 600C, 90 sec exhibited lower dark current by five orders of magnitude than conventional one. Further, it was also found that the UV-to-visible rejection ratio of GaN PDs with Ni treatment is 12146 while that of GaN MSM PDs without Ni treatment is 102. The smaller dark current and higher responsivity observed from the PD prepared with Ni treatment indicated that we could improve the performance of GaN-based MSM PDs by using Ni treatment methodology.",

author = "Chen, {T. P.} and Young, {S. J.} and Shoou-Jinn Chang and Wang, {S. M.} and Hsiao, {C. H.} and Huang, {B. R.} and Yang, {C. B.}",

year = "2012",

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TY - JOUR

T1 - Effect of nickel annealing on GaN-based photodetectors

AU - Chen, T. P.

AU - Young, S. J.

AU - Chang, Shoou-Jinn

AU - Wang, S. M.

AU - Hsiao, C. H.

AU - Huang, B. R.

AU - Yang, C. B.

PY - 2012/2/27

Y1 - 2012/2/27

N2 - In this study, GaN metal-semiconductor-metal (MSM) photodetectors (PDs) prepared with and without Ni treatment were fabricated. From I-V measurement, it was found that the fabricated device annealed in O 2 ambient at 600C, 90 sec exhibited lower dark current by five orders of magnitude than conventional one. Further, it was also found that the UV-to-visible rejection ratio of GaN PDs with Ni treatment is 12146 while that of GaN MSM PDs without Ni treatment is 102. The smaller dark current and higher responsivity observed from the PD prepared with Ni treatment indicated that we could improve the performance of GaN-based MSM PDs by using Ni treatment methodology.

AB - In this study, GaN metal-semiconductor-metal (MSM) photodetectors (PDs) prepared with and without Ni treatment were fabricated. From I-V measurement, it was found that the fabricated device annealed in O 2 ambient at 600C, 90 sec exhibited lower dark current by five orders of magnitude than conventional one. Further, it was also found that the UV-to-visible rejection ratio of GaN PDs with Ni treatment is 12146 while that of GaN MSM PDs without Ni treatment is 102. The smaller dark current and higher responsivity observed from the PD prepared with Ni treatment indicated that we could improve the performance of GaN-based MSM PDs by using Ni treatment methodology.

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