Effect of nitrogen doping on the electron field emission properties of chemical vapor deposited diamond films

Chuan-Feng Shih, Kuo Shung Liu, I. Nan Lin

Research output: Contribution to journalConference articlepeer-review

29 Citations (Scopus)

Abstract

Nitrogen-doped diamond films were successfully synthesized using a urea/methanol saturated solution as a nitrogen source. Scanning electron microscopy (SEM) and Raman spectroscopy revealed that the morphology and quality of the diamond films were not altered due to nitrogen doping. However, increasing the urea/methanol ratio in gas mixture markedly influences the field emission properties of diamond films, which were optimized when the films were grown using H2/CH4/urea = 300:18:6 sccm. The electron field emission of the films can be turned on at a low field as 5.0 V μm-1 and the emission current density as large as Jc = 1019 μA cm-2 can be attained at 21.6 V μm-1 applied field. The effective work function is φe = 0.034 eV.

Original languageEnglish
Pages (from-to)1591-1599
Number of pages9
JournalDiamond and Related Materials
Volume9
Issue number9
DOIs
Publication statusPublished - 2000 Jan 1
Event5th International Conference on Advanced Materials - Beijing, China
Duration: 1999 Jun 131999 Jun 18

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Physics and Astronomy(all)
  • Materials Chemistry
  • Electrical and Electronic Engineering

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