Effect of nitrogen doping on the electron field emission properties of chemical vapor deposited diamond films

Chuan-Feng Shih, Kuo Shung Liu, I. Nan Lin

Research output: Contribution to journalConference article

29 Citations (Scopus)

Abstract

Nitrogen-doped diamond films were successfully synthesized using a urea/methanol saturated solution as a nitrogen source. Scanning electron microscopy (SEM) and Raman spectroscopy revealed that the morphology and quality of the diamond films were not altered due to nitrogen doping. However, increasing the urea/methanol ratio in gas mixture markedly influences the field emission properties of diamond films, which were optimized when the films were grown using H2/CH4/urea = 300:18:6 sccm. The electron field emission of the films can be turned on at a low field as 5.0 V μm-1 and the emission current density as large as Jc = 1019 μA cm-2 can be attained at 21.6 V μm-1 applied field. The effective work function is φe = 0.034 eV.

Original languageEnglish
Pages (from-to)1591-1599
Number of pages9
JournalDiamond and Related Materials
Volume9
Issue number9
DOIs
Publication statusPublished - 2000 Jan 1
Event5th International Conference on Advanced Materials - Beijing, China
Duration: 1999 Jun 131999 Jun 18

Fingerprint

Diamond films
diamond films
ureas
Urea
Field emission
electron emission
field emission
Nitrogen
Vapors
Doping (additives)
vapors
nitrogen
Methanol
Electrons
methyl alcohol
Gas mixtures
gas mixtures
Raman spectroscopy
Current density
current density

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Physics and Astronomy(all)
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

@article{1e2af5847acd4c5faea4d402ad55feb9,
title = "Effect of nitrogen doping on the electron field emission properties of chemical vapor deposited diamond films",
abstract = "Nitrogen-doped diamond films were successfully synthesized using a urea/methanol saturated solution as a nitrogen source. Scanning electron microscopy (SEM) and Raman spectroscopy revealed that the morphology and quality of the diamond films were not altered due to nitrogen doping. However, increasing the urea/methanol ratio in gas mixture markedly influences the field emission properties of diamond films, which were optimized when the films were grown using H2/CH4/urea = 300:18:6 sccm. The electron field emission of the films can be turned on at a low field as 5.0 V μm-1 and the emission current density as large as Jc = 1019 μA cm-2 can be attained at 21.6 V μm-1 applied field. The effective work function is φe = 0.034 eV.",
author = "Chuan-Feng Shih and Liu, {Kuo Shung} and Lin, {I. Nan}",
year = "2000",
month = "1",
day = "1",
doi = "10.1016/S0925-9635(00)00309-5",
language = "English",
volume = "9",
pages = "1591--1599",
journal = "Diamond and Related Materials",
issn = "0925-9635",
publisher = "Elsevier BV",
number = "9",

}

Effect of nitrogen doping on the electron field emission properties of chemical vapor deposited diamond films. / Shih, Chuan-Feng; Liu, Kuo Shung; Lin, I. Nan.

In: Diamond and Related Materials, Vol. 9, No. 9, 01.01.2000, p. 1591-1599.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Effect of nitrogen doping on the electron field emission properties of chemical vapor deposited diamond films

AU - Shih, Chuan-Feng

AU - Liu, Kuo Shung

AU - Lin, I. Nan

PY - 2000/1/1

Y1 - 2000/1/1

N2 - Nitrogen-doped diamond films were successfully synthesized using a urea/methanol saturated solution as a nitrogen source. Scanning electron microscopy (SEM) and Raman spectroscopy revealed that the morphology and quality of the diamond films were not altered due to nitrogen doping. However, increasing the urea/methanol ratio in gas mixture markedly influences the field emission properties of diamond films, which were optimized when the films were grown using H2/CH4/urea = 300:18:6 sccm. The electron field emission of the films can be turned on at a low field as 5.0 V μm-1 and the emission current density as large as Jc = 1019 μA cm-2 can be attained at 21.6 V μm-1 applied field. The effective work function is φe = 0.034 eV.

AB - Nitrogen-doped diamond films were successfully synthesized using a urea/methanol saturated solution as a nitrogen source. Scanning electron microscopy (SEM) and Raman spectroscopy revealed that the morphology and quality of the diamond films were not altered due to nitrogen doping. However, increasing the urea/methanol ratio in gas mixture markedly influences the field emission properties of diamond films, which were optimized when the films were grown using H2/CH4/urea = 300:18:6 sccm. The electron field emission of the films can be turned on at a low field as 5.0 V μm-1 and the emission current density as large as Jc = 1019 μA cm-2 can be attained at 21.6 V μm-1 applied field. The effective work function is φe = 0.034 eV.

UR - http://www.scopus.com/inward/record.url?scp=0034274759&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034274759&partnerID=8YFLogxK

U2 - 10.1016/S0925-9635(00)00309-5

DO - 10.1016/S0925-9635(00)00309-5

M3 - Conference article

AN - SCOPUS:0034274759

VL - 9

SP - 1591

EP - 1599

JO - Diamond and Related Materials

JF - Diamond and Related Materials

SN - 0925-9635

IS - 9

ER -