Effect of nitrogen doping on the electron field emission properties of chemical vapor deposited diamond films

Chuan Feng Shih; Kuo Shung Liu; I. Nan Lin

doi:10.1016/S0925-9635(00)00309-5

Effect of nitrogen doping on the electron field emission properties of chemical vapor deposited diamond films

Chuan Feng Shih, Kuo Shung Liu, I. Nan Lin

Department of Electrical Engineering

Research output: Contribution to journal › Conference article › peer-review

31 Citations (Scopus)

Abstract

Nitrogen-doped diamond films were successfully synthesized using a urea/methanol saturated solution as a nitrogen source. Scanning electron microscopy (SEM) and Raman spectroscopy revealed that the morphology and quality of the diamond films were not altered due to nitrogen doping. However, increasing the urea/methanol ratio in gas mixture markedly influences the field emission properties of diamond films, which were optimized when the films were grown using H₂/CH₄/urea = 300:18:6 sccm. The electron field emission of the films can be turned on at a low field as 5.0 V μm^-1 and the emission current density as large as J_c = 1019 μA cm^-2 can be attained at 21.6 V μm^-1 applied field. The effective work function is φ_e = 0.034 eV.

Original language	English
Pages (from-to)	1591-1599
Number of pages	9
Journal	Diamond and Related Materials
Volume	9
Issue number	9
DOIs	https://doi.org/10.1016/S0925-9635(00)00309-5
Publication status	Published - 2000
Event	5th International Conference on Advanced Materials - Beijing, China Duration: 1999 Jun 13 → 1999 Jun 18

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
General Chemistry
Mechanical Engineering
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/S0925-9635(00)00309-5

Cite this

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title = "Effect of nitrogen doping on the electron field emission properties of chemical vapor deposited diamond films",

abstract = "Nitrogen-doped diamond films were successfully synthesized using a urea/methanol saturated solution as a nitrogen source. Scanning electron microscopy (SEM) and Raman spectroscopy revealed that the morphology and quality of the diamond films were not altered due to nitrogen doping. However, increasing the urea/methanol ratio in gas mixture markedly influences the field emission properties of diamond films, which were optimized when the films were grown using H2/CH4/urea = 300:18:6 sccm. The electron field emission of the films can be turned on at a low field as 5.0 V μm-1 and the emission current density as large as Jc = 1019 μA cm-2 can be attained at 21.6 V μm-1 applied field. The effective work function is φe = 0.034 eV.",

author = "Shih, {Chuan Feng} and Liu, {Kuo Shung} and Lin, {I. Nan}",

note = "Funding Information: The authors would like to thank the National Science Council, Republic of China, for the financial support through the project number NSC 87-2112-M-007-032.; 5th International Conference on Advanced Materials ; Conference date: 13-06-1999 Through 18-06-1999",

year = "2000",

doi = "10.1016/S0925-9635(00)00309-5",

language = "English",

volume = "9",

pages = "1591--1599",

journal = "Diamond and Related Materials",

issn = "0925-9635",

publisher = "Elsevier BV",

number = "9",

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TY - JOUR

T1 - Effect of nitrogen doping on the electron field emission properties of chemical vapor deposited diamond films

AU - Shih, Chuan Feng

AU - Liu, Kuo Shung

AU - Lin, I. Nan

N1 - Funding Information: The authors would like to thank the National Science Council, Republic of China, for the financial support through the project number NSC 87-2112-M-007-032.

PY - 2000

Y1 - 2000

N2 - Nitrogen-doped diamond films were successfully synthesized using a urea/methanol saturated solution as a nitrogen source. Scanning electron microscopy (SEM) and Raman spectroscopy revealed that the morphology and quality of the diamond films were not altered due to nitrogen doping. However, increasing the urea/methanol ratio in gas mixture markedly influences the field emission properties of diamond films, which were optimized when the films were grown using H2/CH4/urea = 300:18:6 sccm. The electron field emission of the films can be turned on at a low field as 5.0 V μm-1 and the emission current density as large as Jc = 1019 μA cm-2 can be attained at 21.6 V μm-1 applied field. The effective work function is φe = 0.034 eV.

AB - Nitrogen-doped diamond films were successfully synthesized using a urea/methanol saturated solution as a nitrogen source. Scanning electron microscopy (SEM) and Raman spectroscopy revealed that the morphology and quality of the diamond films were not altered due to nitrogen doping. However, increasing the urea/methanol ratio in gas mixture markedly influences the field emission properties of diamond films, which were optimized when the films were grown using H2/CH4/urea = 300:18:6 sccm. The electron field emission of the films can be turned on at a low field as 5.0 V μm-1 and the emission current density as large as Jc = 1019 μA cm-2 can be attained at 21.6 V μm-1 applied field. The effective work function is φe = 0.034 eV.

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UR - http://www.scopus.com/inward/citedby.url?scp=0034274759&partnerID=8YFLogxK

U2 - 10.1016/S0925-9635(00)00309-5

DO - 10.1016/S0925-9635(00)00309-5

M3 - Conference article

AN - SCOPUS:0034274759

SN - 0925-9635

VL - 9

SP - 1591

EP - 1599

JO - Diamond and Related Materials

JF - Diamond and Related Materials

IS - 9

T2 - 5th International Conference on Advanced Materials

Y2 - 13 June 1999 through 18 June 1999

ER -

Effect of nitrogen doping on the electron field emission properties of chemical vapor deposited diamond films

Abstract

All Science Journal Classification (ASJC) codes

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