Effect of organic solar cells using various power O2 plasma treatments on the indium tin oxide substrate

Jhong Ciao Ke; Yeong Her Wang; Kan Lin Chen; Chien Jung Huang

doi:10.1016/j.jcis.2015.12.002

Effect of organic solar cells using various power O₂ plasma treatments on the indium tin oxide substrate

Jhong Ciao Ke, Yeong Her Wang, Kan Lin Chen, Chien Jung Huang

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Abstract

The effect of organic solar cells (OSCs) by using different power O₂ plasma treatments on indium tin oxide (ITO) substrate was studied. The power of O₂ plasma treatment on ITO substrate was varied from 20W to 80W, and the power conversion efficiency of device was improved from 1.18% to 1.93% at 20W O₂ plasma treatment. The function of O₂ plasma treatment on ITO substrate was to remove the surface impurity and to improve the work function of ITO, which can reduce the energy offset between the ITO and SubPc layer and depress the leakage current of device, leading to the shunt resistance increased from 897 to 1100Ωcm². The surface roughness of ITO decreased from 3.81 to 3.33nm and the work function of ITO increased from 4.75 to 5.2eV after 20W O₂ plasma treatment on ITO substrate. As a result, the open circuit voltage and the fill factor were improved from 0.46 to 0.70V and from 0.56 to 0.61, respectively. However, the series resistance of device was dramatically increased as the power of O₂ plasma treatment exceeds 40W, leading to the efficiency reduction. The result is attributed to the variation of oxygen vacancies in ITO film after the 60, 80W O₂ plasma treatment. As a consequence, the power of O₂ plasma treatment on ITO substrate for the OSCs application should be controlled below 40W to avoid affecting the electricity of ITO film.

Original language	English
Pages (from-to)	311-315
Number of pages	5
Journal	Journal of Colloid And Interface Science
Volume	465
DOIs	https://doi.org/10.1016/j.jcis.2015.12.002
Publication status	Published - 2016 Mar 1

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All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Biomaterials
Surfaces, Coatings and Films
Colloid and Surface Chemistry

Cite this

Ke, J. C., Wang, Y. H., Chen, K. L., & Huang, C. J. (2016). Effect of organic solar cells using various power O₂ plasma treatments on the indium tin oxide substrate. Journal of Colloid And Interface Science, 465, 311-315. https://doi.org/10.1016/j.jcis.2015.12.002

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abstract = "The effect of organic solar cells (OSCs) by using different power O2 plasma treatments on indium tin oxide (ITO) substrate was studied. The power of O2 plasma treatment on ITO substrate was varied from 20W to 80W, and the power conversion efficiency of device was improved from 1.18% to 1.93% at 20W O2 plasma treatment. The function of O2 plasma treatment on ITO substrate was to remove the surface impurity and to improve the work function of ITO, which can reduce the energy offset between the ITO and SubPc layer and depress the leakage current of device, leading to the shunt resistance increased from 897 to 1100Ωcm2. The surface roughness of ITO decreased from 3.81 to 3.33nm and the work function of ITO increased from 4.75 to 5.2eV after 20W O2 plasma treatment on ITO substrate. As a result, the open circuit voltage and the fill factor were improved from 0.46 to 0.70V and from 0.56 to 0.61, respectively. However, the series resistance of device was dramatically increased as the power of O2 plasma treatment exceeds 40W, leading to the efficiency reduction. The result is attributed to the variation of oxygen vacancies in ITO film after the 60, 80W O2 plasma treatment. As a consequence, the power of O2 plasma treatment on ITO substrate for the OSCs application should be controlled below 40W to avoid affecting the electricity of ITO film.",

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AB - The effect of organic solar cells (OSCs) by using different power O2 plasma treatments on indium tin oxide (ITO) substrate was studied. The power of O2 plasma treatment on ITO substrate was varied from 20W to 80W, and the power conversion efficiency of device was improved from 1.18% to 1.93% at 20W O2 plasma treatment. The function of O2 plasma treatment on ITO substrate was to remove the surface impurity and to improve the work function of ITO, which can reduce the energy offset between the ITO and SubPc layer and depress the leakage current of device, leading to the shunt resistance increased from 897 to 1100Ωcm2. The surface roughness of ITO decreased from 3.81 to 3.33nm and the work function of ITO increased from 4.75 to 5.2eV after 20W O2 plasma treatment on ITO substrate. As a result, the open circuit voltage and the fill factor were improved from 0.46 to 0.70V and from 0.56 to 0.61, respectively. However, the series resistance of device was dramatically increased as the power of O2 plasma treatment exceeds 40W, leading to the efficiency reduction. The result is attributed to the variation of oxygen vacancies in ITO film after the 60, 80W O2 plasma treatment. As a consequence, the power of O2 plasma treatment on ITO substrate for the OSCs application should be controlled below 40W to avoid affecting the electricity of ITO film.

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10.1016/j.jcis.2015.12.002