Abstract
The effect of organic solar cells (OSCs) by using different power O2 plasma treatments on indium tin oxide (ITO) substrate was studied. The power of O2 plasma treatment on ITO substrate was varied from 20W to 80W, and the power conversion efficiency of device was improved from 1.18% to 1.93% at 20W O2 plasma treatment. The function of O2 plasma treatment on ITO substrate was to remove the surface impurity and to improve the work function of ITO, which can reduce the energy offset between the ITO and SubPc layer and depress the leakage current of device, leading to the shunt resistance increased from 897 to 1100Ωcm2. The surface roughness of ITO decreased from 3.81 to 3.33nm and the work function of ITO increased from 4.75 to 5.2eV after 20W O2 plasma treatment on ITO substrate. As a result, the open circuit voltage and the fill factor were improved from 0.46 to 0.70V and from 0.56 to 0.61, respectively. However, the series resistance of device was dramatically increased as the power of O2 plasma treatment exceeds 40W, leading to the efficiency reduction. The result is attributed to the variation of oxygen vacancies in ITO film after the 60, 80W O2 plasma treatment. As a consequence, the power of O2 plasma treatment on ITO substrate for the OSCs application should be controlled below 40W to avoid affecting the electricity of ITO film.
| Original language | English |
|---|---|
| Pages (from-to) | 311-315 |
| Number of pages | 5 |
| Journal | Journal of Colloid And Interface Science |
| Volume | 465 |
| DOIs | |
| Publication status | Published - 2016 Mar 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Biomaterials
- Surfaces, Coatings and Films
- Colloid and Surface Chemistry
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Effect of organic solar cells using various power O2 plasma treatments on the indium tin oxide substrate. / Ke, Jhong Ciao; Wang, Yeong-Her; Chen, Kan Lin; Huang, Chien Jung.
In: Journal of Colloid And Interface Science, Vol. 465, 01.03.2016, p. 311-315.Research output: Contribution to journal › Article
TY - JOUR
T1 - Effect of organic solar cells using various power O2 plasma treatments on the indium tin oxide substrate
AU - Ke, Jhong Ciao
AU - Wang, Yeong-Her
AU - Chen, Kan Lin
AU - Huang, Chien Jung
PY - 2016/3/1
Y1 - 2016/3/1
N2 - The effect of organic solar cells (OSCs) by using different power O2 plasma treatments on indium tin oxide (ITO) substrate was studied. The power of O2 plasma treatment on ITO substrate was varied from 20W to 80W, and the power conversion efficiency of device was improved from 1.18% to 1.93% at 20W O2 plasma treatment. The function of O2 plasma treatment on ITO substrate was to remove the surface impurity and to improve the work function of ITO, which can reduce the energy offset between the ITO and SubPc layer and depress the leakage current of device, leading to the shunt resistance increased from 897 to 1100Ωcm2. The surface roughness of ITO decreased from 3.81 to 3.33nm and the work function of ITO increased from 4.75 to 5.2eV after 20W O2 plasma treatment on ITO substrate. As a result, the open circuit voltage and the fill factor were improved from 0.46 to 0.70V and from 0.56 to 0.61, respectively. However, the series resistance of device was dramatically increased as the power of O2 plasma treatment exceeds 40W, leading to the efficiency reduction. The result is attributed to the variation of oxygen vacancies in ITO film after the 60, 80W O2 plasma treatment. As a consequence, the power of O2 plasma treatment on ITO substrate for the OSCs application should be controlled below 40W to avoid affecting the electricity of ITO film.
AB - The effect of organic solar cells (OSCs) by using different power O2 plasma treatments on indium tin oxide (ITO) substrate was studied. The power of O2 plasma treatment on ITO substrate was varied from 20W to 80W, and the power conversion efficiency of device was improved from 1.18% to 1.93% at 20W O2 plasma treatment. The function of O2 plasma treatment on ITO substrate was to remove the surface impurity and to improve the work function of ITO, which can reduce the energy offset between the ITO and SubPc layer and depress the leakage current of device, leading to the shunt resistance increased from 897 to 1100Ωcm2. The surface roughness of ITO decreased from 3.81 to 3.33nm and the work function of ITO increased from 4.75 to 5.2eV after 20W O2 plasma treatment on ITO substrate. As a result, the open circuit voltage and the fill factor were improved from 0.46 to 0.70V and from 0.56 to 0.61, respectively. However, the series resistance of device was dramatically increased as the power of O2 plasma treatment exceeds 40W, leading to the efficiency reduction. The result is attributed to the variation of oxygen vacancies in ITO film after the 60, 80W O2 plasma treatment. As a consequence, the power of O2 plasma treatment on ITO substrate for the OSCs application should be controlled below 40W to avoid affecting the electricity of ITO film.
UR - http://www.scopus.com/inward/record.url?scp=84949604245&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84949604245&partnerID=8YFLogxK
U2 - 10.1016/j.jcis.2015.12.002
DO - 10.1016/j.jcis.2015.12.002
M3 - Article
AN - SCOPUS:84949604245
VL - 465
SP - 311
EP - 315
JO - Journal of Colloid and Interface Science
JF - Journal of Colloid and Interface Science
SN - 0021-9797
ER -