Effect of oxygen partial pressure on electrical characteristics of amorphous indium gallium zinc oxide thin-film transistors fabricated by thermal annealing

C. J. Chiu; Z. W. Pei; S. T. Chang; S. P. Chang; S. J. Chang

doi:10.1016/j.vacuum.2011.06.014

Effect of oxygen partial pressure on electrical characteristics of amorphous indium gallium zinc oxide thin-film transistors fabricated by thermal annealing

C. J. Chiu, Z. W. Pei, S. T. Chang, S. P. Chang, S. J. Chang

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

We report the fabrication and electrical characteristics of high-performance amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with a polymer gate dielectric prepared by spin coating on a glass substrate at different oxygen partial pressure values. The transmittance of the deposited polymer film was greater than 90% at 600 nm a-IGZO thin films were deposited on glass substrates using RF magnetron sputtering at different oxygen partial pressure values. The a-IGZO TFTs were prepared by rapid thermal annealing at 350 °C for 10 min at a 0.2% oxygen partial pressure. It was observed that a-IGZO TFTs with an active channel layer exhibited enhanced mode operation, a threshold voltage of 1 V, an on-off current ratio of 10 ³, and a field-effect mobility of 18 cm ²/Vs.

Original language	English
Pages (from-to)	246-249
Number of pages	4
Journal	Vacuum
Volume	86
Issue number	3
DOIs	https://doi.org/10.1016/j.vacuum.2011.06.014
Publication status	Published - 2011 Oct 8

All Science Journal Classification (ASJC) codes

Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films

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10.1016/j.vacuum.2011.06.014

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title = "Effect of oxygen partial pressure on electrical characteristics of amorphous indium gallium zinc oxide thin-film transistors fabricated by thermal annealing",

abstract = "We report the fabrication and electrical characteristics of high-performance amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with a polymer gate dielectric prepared by spin coating on a glass substrate at different oxygen partial pressure values. The transmittance of the deposited polymer film was greater than 90% at 600 nm a-IGZO thin films were deposited on glass substrates using RF magnetron sputtering at different oxygen partial pressure values. The a-IGZO TFTs were prepared by rapid thermal annealing at 350 °C for 10 min at a 0.2% oxygen partial pressure. It was observed that a-IGZO TFTs with an active channel layer exhibited enhanced mode operation, a threshold voltage of 1 V, an on-off current ratio of 10 3, and a field-effect mobility of 18 cm 2/Vs.",

author = "Chiu, {C. J.} and Pei, {Z. W.} and Chang, {S. T.} and Chang, {S. P.} and Chang, {S. J.}",

note = "Funding Information: This work was partly supported by the Center for Frontier Materials and Micro/Nano Science and Technology, and partly by the Advanced Optoelectronic Technology Center, National Cheng Kung University (NCKU), under projects from the Ministry of Education. The authors would also like to thank the Bureau of Energy, Ministry of Economic Affairs of Taiwan , for financially supporting this research under Contract No. 98-D0204-6, and the LED Lighting and Research Center, NCKU, for their assistance with the measurements.",

year = "2011",

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doi = "10.1016/j.vacuum.2011.06.014",

language = "English",

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T1 - Effect of oxygen partial pressure on electrical characteristics of amorphous indium gallium zinc oxide thin-film transistors fabricated by thermal annealing

AU - Chiu, C. J.

AU - Pei, Z. W.

AU - Chang, S. T.

AU - Chang, S. P.

AU - Chang, S. J.

N1 - Funding Information: This work was partly supported by the Center for Frontier Materials and Micro/Nano Science and Technology, and partly by the Advanced Optoelectronic Technology Center, National Cheng Kung University (NCKU), under projects from the Ministry of Education. The authors would also like to thank the Bureau of Energy, Ministry of Economic Affairs of Taiwan , for financially supporting this research under Contract No. 98-D0204-6, and the LED Lighting and Research Center, NCKU, for their assistance with the measurements.

PY - 2011/10/8

Y1 - 2011/10/8

N2 - We report the fabrication and electrical characteristics of high-performance amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with a polymer gate dielectric prepared by spin coating on a glass substrate at different oxygen partial pressure values. The transmittance of the deposited polymer film was greater than 90% at 600 nm a-IGZO thin films were deposited on glass substrates using RF magnetron sputtering at different oxygen partial pressure values. The a-IGZO TFTs were prepared by rapid thermal annealing at 350 °C for 10 min at a 0.2% oxygen partial pressure. It was observed that a-IGZO TFTs with an active channel layer exhibited enhanced mode operation, a threshold voltage of 1 V, an on-off current ratio of 10 3, and a field-effect mobility of 18 cm 2/Vs.

AB - We report the fabrication and electrical characteristics of high-performance amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with a polymer gate dielectric prepared by spin coating on a glass substrate at different oxygen partial pressure values. The transmittance of the deposited polymer film was greater than 90% at 600 nm a-IGZO thin films were deposited on glass substrates using RF magnetron sputtering at different oxygen partial pressure values. The a-IGZO TFTs were prepared by rapid thermal annealing at 350 °C for 10 min at a 0.2% oxygen partial pressure. It was observed that a-IGZO TFTs with an active channel layer exhibited enhanced mode operation, a threshold voltage of 1 V, an on-off current ratio of 10 3, and a field-effect mobility of 18 cm 2/Vs.

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JO - Vacuum

JF - Vacuum

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Effect of oxygen partial pressure on electrical characteristics of amorphous indium gallium zinc oxide thin-film transistors fabricated by thermal annealing

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