Effect of oxygen partial pressure on electrical characteristics of amorphous indium gallium zinc oxide thin-film transistors fabricated by thermal annealing

C. J. Chiu, Z. W. Pei, S. T. Chang, S. P. Chang, S. J. Chang

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)

Abstract

We report the fabrication and electrical characteristics of high-performance amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with a polymer gate dielectric prepared by spin coating on a glass substrate at different oxygen partial pressure values. The transmittance of the deposited polymer film was greater than 90% at 600 nm a-IGZO thin films were deposited on glass substrates using RF magnetron sputtering at different oxygen partial pressure values. The a-IGZO TFTs were prepared by rapid thermal annealing at 350 °C for 10 min at a 0.2% oxygen partial pressure. It was observed that a-IGZO TFTs with an active channel layer exhibited enhanced mode operation, a threshold voltage of 1 V, an on-off current ratio of 10 3, and a field-effect mobility of 18 cm 2/Vs.

Original languageEnglish
Pages (from-to)246-249
Number of pages4
JournalVacuum
Volume86
Issue number3
DOIs
Publication statusPublished - 2011 Oct 8

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films

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