Effect of oxygen partial pressure on electrical characteristics of amorphous indium-gallium-zinc-oxide thin-film transistors

Sheng Po Chang; Tsung Han Yang; Chao Jen Ho; Shoou Jinn Chang

doi:10.1166/jno.2013.1479

Effect of oxygen partial pressure on electrical characteristics of amorphous indium-gallium-zinc-oxide thin-film transistors

Sheng Po Chang, Tsung Han Yang, Chao Jen Ho, Shoou Jinn Chang

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The authors report on the fabrication and the electrical characteristics of thin-film transistors (TFTs) with an amorphous indium-gallium-zinc-oxide (a-IGZO) channel, which was deposited by sputtering using an IGZO target at different oxygen partial pressures. The effect of different oxygen concentration on the device performance of a-IGZO TFTs was investigated. With decreasing zinc and increasing oxygen content, the threshold voltage (V_T) shifted in the positive direction. Such a positive V_Tshift suggests that the number of oxygen vacancies in the a-IGZO film decreased. The subthreshold swing degrades due to an increasing tailing of trap states. At a relatively high IGZO power of 110 W and an oxygen flow rate of 4%, a threshold voltage of 1.8 V, an on-off current ratio of 3.4 × 10⁴, and a field-effect mobility of 4.4 cm²/(Vs) were observed.

Original language	English
Pages (from-to)	361-365
Number of pages	5
Journal	Journal of Nanoelectronics and Optoelectronics
Volume	8
Issue number	4
DOIs	https://doi.org/10.1166/jno.2013.1479
Publication status	Published - 2013 Jun

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1166/jno.2013.1479

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@article{0dc6fe5dd933461da4656d0e14ec797f,

title = "Effect of oxygen partial pressure on electrical characteristics of amorphous indium-gallium-zinc-oxide thin-film transistors",

abstract = "The authors report on the fabrication and the electrical characteristics of thin-film transistors (TFTs) with an amorphous indium-gallium-zinc-oxide (a-IGZO) channel, which was deposited by sputtering using an IGZO target at different oxygen partial pressures. The effect of different oxygen concentration on the device performance of a-IGZO TFTs was investigated. With decreasing zinc and increasing oxygen content, the threshold voltage (VT) shifted in the positive direction. Such a positive VTshift suggests that the number of oxygen vacancies in the a-IGZO film decreased. The subthreshold swing degrades due to an increasing tailing of trap states. At a relatively high IGZO power of 110 W and an oxygen flow rate of 4\%, a threshold voltage of 1.8 V, an on-off current ratio of 3.4 × 104, and a field-effect mobility of 4.4 cm2/(Vs) were observed.",

author = "Chang, \{Sheng Po\} and Yang, \{Tsung Han\} and Ho, \{Chao Jen\} and Chang, \{Shoou Jinn\}",

year = "2013",

month = jun,

doi = "10.1166/jno.2013.1479",

language = "English",

volume = "8",

pages = "361--365",

journal = "Journal of Nanoelectronics and Optoelectronics",

issn = "1555-130X",

publisher = "American Scientific Publishers",

number = "4",

}

TY - JOUR

T1 - Effect of oxygen partial pressure on electrical characteristics of amorphous indium-gallium-zinc-oxide thin-film transistors

AU - Chang, Sheng Po

AU - Yang, Tsung Han

AU - Ho, Chao Jen

AU - Chang, Shoou Jinn

PY - 2013/6

Y1 - 2013/6

N2 - The authors report on the fabrication and the electrical characteristics of thin-film transistors (TFTs) with an amorphous indium-gallium-zinc-oxide (a-IGZO) channel, which was deposited by sputtering using an IGZO target at different oxygen partial pressures. The effect of different oxygen concentration on the device performance of a-IGZO TFTs was investigated. With decreasing zinc and increasing oxygen content, the threshold voltage (VT) shifted in the positive direction. Such a positive VTshift suggests that the number of oxygen vacancies in the a-IGZO film decreased. The subthreshold swing degrades due to an increasing tailing of trap states. At a relatively high IGZO power of 110 W and an oxygen flow rate of 4%, a threshold voltage of 1.8 V, an on-off current ratio of 3.4 × 104, and a field-effect mobility of 4.4 cm2/(Vs) were observed.

AB - The authors report on the fabrication and the electrical characteristics of thin-film transistors (TFTs) with an amorphous indium-gallium-zinc-oxide (a-IGZO) channel, which was deposited by sputtering using an IGZO target at different oxygen partial pressures. The effect of different oxygen concentration on the device performance of a-IGZO TFTs was investigated. With decreasing zinc and increasing oxygen content, the threshold voltage (VT) shifted in the positive direction. Such a positive VTshift suggests that the number of oxygen vacancies in the a-IGZO film decreased. The subthreshold swing degrades due to an increasing tailing of trap states. At a relatively high IGZO power of 110 W and an oxygen flow rate of 4%, a threshold voltage of 1.8 V, an on-off current ratio of 3.4 × 104, and a field-effect mobility of 4.4 cm2/(Vs) were observed.

UR - https://www.scopus.com/pages/publications/84891429571

UR - https://www.scopus.com/inward/citedby.url?scp=84891429571&partnerID=8YFLogxK

U2 - 10.1166/jno.2013.1479

DO - 10.1166/jno.2013.1479

M3 - Article

AN - SCOPUS:84891429571

SN - 1555-130X

VL - 8

SP - 361

EP - 365

JO - Journal of Nanoelectronics and Optoelectronics

JF - Journal of Nanoelectronics and Optoelectronics

IS - 4

ER -

Effect of oxygen partial pressure on electrical characteristics of amorphous indium-gallium-zinc-oxide thin-film transistors

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