Effect of oxygen partial pressure on electrical characteristics of amorphous zinc-tin-oxide thin-film transistors

Sheng Po Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We fabricated and studied the electrical characteristics of thin-film transistors with an amorphous zinc-tin-oxide (a-ZTO) channel, which was deposited by radio frequency magnetron co-sputtering under different oxygen partial pressures. The effect of varying the oxygen concentration on the electrical properties and device performance of the a-ZTO TFTs was investigated. A positive shift observed in the threshold voltage with increasing oxygen suggests that the number of oxygen vacancies in the a-ZTO film decreased. With an oxygen flow rate of 4%, a threshold voltage of 2.25 V, an on-off current ratio of 2.1 × 103, and a subthreshold slope of 0.8 V·dec-1 were obtained.

Original languageEnglish
Title of host publicationInnovative Solutions in the Field of Engineering Sciences
PublisherTrans Tech Publications Ltd
Pages229-233
Number of pages5
ISBN (Print)9783038351511
DOIs
Publication statusPublished - 2014
Event2014 International Conference on Applied Mechanics and Mechanical Automation, AMMA 2014 - Macao, China
Duration: 2014 May 202014 May 21

Publication series

NameApplied Mechanics and Materials
Volume590
ISSN (Print)1660-9336
ISSN (Electronic)1662-7482

Conference

Conference2014 International Conference on Applied Mechanics and Mechanical Automation, AMMA 2014
CountryChina
CityMacao
Period14-05-2014-05-21

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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