Effect of oxygen partial pressure on electrical characteristics of amorphous indium gallium zinc oxide thin-film transistors fabricated by thermal annealing

  • C. J. Chiu
  • , Z. W. Pei
  • , S. T. Chang
  • , S. P. Chang
  • , S. J. Chang

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

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