Effect of oxygen vacancy concentration on indium tungsten oxide UV-A photodetector

Kuan Yin Chen; Sheng Po Chang; Chih hung Lin

doi:10.1039/C8RA08803A

Effect of oxygen vacancy concentration on indium tungsten oxide UV-A photodetector

Kuan Yin Chen, Sheng Po Chang, Chih hung Lin

Center for Micro/Nano Science and Technology

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

An indium tungsten oxide (IWO) ultraviolet (UV) photodetector was fabricated with radio frequency magnetron sputtering. IWO thin films were deposited on devices under various oxygen partial pressure ambiences. With higher oxygen flow ratio, the oxygen vacancies were filled up, reducing the carrier concentration. Lowering the number of defects, such as oxygen vacancies, was effective for optimizing device performance. The on-off current ratio of an IWO UV-A photodetector at 10% oxygen partial pressure could reach 4.56 × 10 ⁴ , with a photoresponsivity of 1.9 × 10 ⁻² A W ⁻¹ , as well as a rejection ratio of 2.68 × 10 ⁴ at a voltage bias of 10 V.

Original language	English
Pages (from-to)	87-90
Number of pages	4
Journal	RSC Advances
Volume	9
Issue number	1
DOIs	https://doi.org/10.1039/C8RA08803A
Publication status	Published - 2019

All Science Journal Classification (ASJC) codes

General Chemistry
General Chemical Engineering

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title = "Effect of oxygen vacancy concentration on indium tungsten oxide UV-A photodetector",

abstract = " An indium tungsten oxide (IWO) ultraviolet (UV) photodetector was fabricated with radio frequency magnetron sputtering. IWO thin films were deposited on devices under various oxygen partial pressure ambiences. With higher oxygen flow ratio, the oxygen vacancies were filled up, reducing the carrier concentration. Lowering the number of defects, such as oxygen vacancies, was effective for optimizing device performance. The on-off current ratio of an IWO UV-A photodetector at 10% oxygen partial pressure could reach 4.56 × 10 4 , with a photoresponsivity of 1.9 × 10 −2 A W −1 , as well as a rejection ratio of 2.68 × 10 4 at a voltage bias of 10 V.",

author = "Chen, {Kuan Yin} and Chang, {Sheng Po} and Lin, {Chih hung}",

note = "Publisher Copyright: {\textcopyright} The Royal Society of Chemistry.",

year = "2019",

doi = "10.1039/C8RA08803A",

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T1 - Effect of oxygen vacancy concentration on indium tungsten oxide UV-A photodetector

AU - Chen, Kuan Yin

AU - Chang, Sheng Po

AU - Lin, Chih hung

N1 - Publisher Copyright: © The Royal Society of Chemistry.

PY - 2019

Y1 - 2019

N2 - An indium tungsten oxide (IWO) ultraviolet (UV) photodetector was fabricated with radio frequency magnetron sputtering. IWO thin films were deposited on devices under various oxygen partial pressure ambiences. With higher oxygen flow ratio, the oxygen vacancies were filled up, reducing the carrier concentration. Lowering the number of defects, such as oxygen vacancies, was effective for optimizing device performance. The on-off current ratio of an IWO UV-A photodetector at 10% oxygen partial pressure could reach 4.56 × 10 4 , with a photoresponsivity of 1.9 × 10 −2 A W −1 , as well as a rejection ratio of 2.68 × 10 4 at a voltage bias of 10 V.

AB - An indium tungsten oxide (IWO) ultraviolet (UV) photodetector was fabricated with radio frequency magnetron sputtering. IWO thin films were deposited on devices under various oxygen partial pressure ambiences. With higher oxygen flow ratio, the oxygen vacancies were filled up, reducing the carrier concentration. Lowering the number of defects, such as oxygen vacancies, was effective for optimizing device performance. The on-off current ratio of an IWO UV-A photodetector at 10% oxygen partial pressure could reach 4.56 × 10 4 , with a photoresponsivity of 1.9 × 10 −2 A W −1 , as well as a rejection ratio of 2.68 × 10 4 at a voltage bias of 10 V.

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Effect of oxygen vacancy concentration on indium tungsten oxide UV-A photodetector

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