Effect of oxygen vacancy concentration on indium tungsten oxide UV-A photodetector

Kuan Yin Chen, Sheng-Po Chang, Chih hung Lin

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


An indium tungsten oxide (IWO) ultraviolet (UV) photodetector was fabricated with radio frequency magnetron sputtering. IWO thin films were deposited on devices under various oxygen partial pressure ambiences. With higher oxygen flow ratio, the oxygen vacancies were filled up, reducing the carrier concentration. Lowering the number of defects, such as oxygen vacancies, was effective for optimizing device performance. The on-off current ratio of an IWO UV-A photodetector at 10% oxygen partial pressure could reach 4.56 × 10 4 , with a photoresponsivity of 1.9 × 10 −2 A W −1 , as well as a rejection ratio of 2.68 × 10 4 at a voltage bias of 10 V.

Original languageEnglish
Pages (from-to)87-90
Number of pages4
JournalRSC Advances
Issue number1
Publication statusPublished - 2019 Jan 1

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Chemical Engineering(all)

Fingerprint Dive into the research topics of 'Effect of oxygen vacancy concentration on indium tungsten oxide UV-A photodetector'. Together they form a unique fingerprint.

Cite this