Atomic layer deposition process was used to fabricate Hafnium dioxide gate dielectrics to investigate the flatband voltage shift relative to SiO 2 . It was found that the direction of the voltage shift depends on the Fermi level position in the gate material. A model was proposed to explain the effects of poly-Si gate type on the flatband voltage shift in MOSFETs.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)