Effect of polycrystalline-silicon gate types on the opposite flatband voltage shift in n-type and p-type metal-oxide-semiconductor field-effect transistors for high-k-HfO
                        2
                         dielectric

C. W. Yang; Y. K. Fang; C. H. Chen; S. F. Chen; Yu-Cheng Lin; C. S. Lin; M. F. Wang; Y. M. Lin; T. H. Hou; C. H. Chen; L. G. Yao; S. C. Chen; M. S. Liang

doi:10.1063/1.1592634

Effect of polycrystalline-silicon gate types on the opposite flatband voltage shift in n-type and p-type metal-oxide-semiconductor field-effect transistors for high-k-HfO ₂ dielectric

C. W. Yang, Y. K. Fang, C. H. Chen, S. F. Chen, Yu-Cheng Lin, C. S. Lin, M. F. Wang, Y. M. Lin, T. H. Hou, C. H. Chen, L. G. Yao, S. C. Chen, M. S. Liang

Research output: Contribution to journal › Article › peer-review

37 Citations (Scopus)

Abstract

Atomic layer deposition process was used to fabricate Hafnium dioxide gate dielectrics to investigate the flatband voltage shift relative to SiO ₂ . It was found that the direction of the voltage shift depends on the Fermi level position in the gate material. A model was proposed to explain the effects of poly-Si gate type on the flatband voltage shift in MOSFETs.

Original language	English
Pages (from-to)	308-310
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	2
DOIs	https://doi.org/10.1063/1.1592634
Publication status	Published - 2003 Jul 14
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1592634

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Yang, C. W., Fang, Y. K., Chen, C. H., Chen, S. F., Lin, Y.-C., Lin, C. S., Wang, M. F., Lin, Y. M., Hou, T. H., Chen, C. H., Yao, L. G., Chen, S. C., & Liang, M. S. (2003). Effect of polycrystalline-silicon gate types on the opposite flatband voltage shift in n-type and p-type metal-oxide-semiconductor field-effect transistors for high-k-HfO ₂ dielectric. Applied Physics Letters, 83(2), 308-310. https://doi.org/10.1063/1.1592634

@article{36314a10d7924778b7afa0b6be6c18ec,

title = "Effect of polycrystalline-silicon gate types on the opposite flatband voltage shift in n-type and p-type metal-oxide-semiconductor field-effect transistors for high-k-HfO 2 dielectric",

abstract = " Atomic layer deposition process was used to fabricate Hafnium dioxide gate dielectrics to investigate the flatband voltage shift relative to SiO 2 . It was found that the direction of the voltage shift depends on the Fermi level position in the gate material. A model was proposed to explain the effects of poly-Si gate type on the flatband voltage shift in MOSFETs. ",

author = "Yang, {C. W.} and Fang, {Y. K.} and Chen, {C. H.} and Chen, {S. F.} and Yu-Cheng Lin and Lin, {C. S.} and Wang, {M. F.} and Lin, {Y. M.} and Hou, {T. H.} and Chen, {C. H.} and Yao, {L. G.} and Chen, {S. C.} and Liang, {M. S.}",

year = "2003",

month = jul,

day = "14",

doi = "10.1063/1.1592634",

language = "English",

volume = "83",

pages = "308--310",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "2",

}

Yang, CW, Fang, YK, Chen, CH, Chen, SF, Lin, Y-C, Lin, CS, Wang, MF, Lin, YM, Hou, TH, Chen, CH, Yao, LG, Chen, SC & Liang, MS 2003, 'Effect of polycrystalline-silicon gate types on the opposite flatband voltage shift in n-type and p-type metal-oxide-semiconductor field-effect transistors for high-k-HfO ₂ dielectric', Applied Physics Letters, vol. 83, no. 2, pp. 308-310. https://doi.org/10.1063/1.1592634

Effect of polycrystalline-silicon gate types on the opposite flatband voltage shift in n-type and p-type metal-oxide-semiconductor field-effect transistors for high-k-HfO ₂ dielectric. / Yang, C. W.; Fang, Y. K.; Chen, C. H. et al.
In: Applied Physics Letters, Vol. 83, No. 2, 14.07.2003, p. 308-310.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Effect of polycrystalline-silicon gate types on the opposite flatband voltage shift in n-type and p-type metal-oxide-semiconductor field-effect transistors for high-k-HfO 2 dielectric

AU - Yang, C. W.

AU - Fang, Y. K.

AU - Chen, C. H.

AU - Chen, S. F.

AU - Lin, Yu-Cheng

AU - Lin, C. S.

AU - Wang, M. F.

AU - Lin, Y. M.

AU - Hou, T. H.

AU - Chen, C. H.

AU - Yao, L. G.

AU - Chen, S. C.

AU - Liang, M. S.

PY - 2003/7/14

Y1 - 2003/7/14

N2 - Atomic layer deposition process was used to fabricate Hafnium dioxide gate dielectrics to investigate the flatband voltage shift relative to SiO 2 . It was found that the direction of the voltage shift depends on the Fermi level position in the gate material. A model was proposed to explain the effects of poly-Si gate type on the flatband voltage shift in MOSFETs.

AB - Atomic layer deposition process was used to fabricate Hafnium dioxide gate dielectrics to investigate the flatband voltage shift relative to SiO 2 . It was found that the direction of the voltage shift depends on the Fermi level position in the gate material. A model was proposed to explain the effects of poly-Si gate type on the flatband voltage shift in MOSFETs.

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DO - 10.1063/1.1592634

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VL - 83

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EP - 310

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

ER -

Effect of polycrystalline-silicon gate types on the opposite flatband voltage shift in n-type and p-type metal-oxide-semiconductor field-effect transistors for high-k-HfO ₂ dielectric

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