Effect of polycrystalline-silicon gate types on the opposite flatband voltage shift in n-type and p-type metal-oxide-semiconductor field-effect transistors for high-k-HfO 2 dielectric

C. W. Yang, Y. K. Fang, C. H. Chen, S. F. Chen, Yu-Cheng Lin, C. S. Lin, M. F. Wang, Y. M. Lin, T. H. Hou, C. H. Chen, L. G. Yao, S. C. Chen, M. S. Liang

Research output: Contribution to journalArticlepeer-review

37 Citations (Scopus)

Abstract

Atomic layer deposition process was used to fabricate Hafnium dioxide gate dielectrics to investigate the flatband voltage shift relative to SiO 2 . It was found that the direction of the voltage shift depends on the Fermi level position in the gate material. A model was proposed to explain the effects of poly-Si gate type on the flatband voltage shift in MOSFETs.

Original languageEnglish
Pages (from-to)308-310
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number2
DOIs
Publication statusPublished - 2003 Jul 14
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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