Effect of polycrystalline-silicon gate types on the opposite flatband voltage shift in n-type and p-type metal-oxide-semiconductor field-effect transistors for high-k-HfO 2 dielectric

C. W. Yang, Y. K. Fang, C. H. Chen, S. F. Chen, Yu-Cheng Lin, C. S. Lin, M. F. Wang, Y. M. Lin, T. H. Hou, C. H. Chen, L. G. Yao, S. C. Chen, M. S. Liang

Research output: Contribution to journalArticlepeer-review

37 Citations (Scopus)

Fingerprint

Dive into the research topics of 'Effect of polycrystalline-silicon gate types on the opposite flatband voltage shift in n-type and p-type metal-oxide-semiconductor field-effect transistors for high-k-HfO 2 dielectric'. Together they form a unique fingerprint.

Physics & Astronomy