Effect of Pt barrier on thermal stability of Ti/Al/Pt/Au in ohmic contact with Si-implanted n-type GaN layers

C. T. Lee; H. W. Kao; F. T. Hwang

doi:10.1007/s11664-001-0072-5

Effect of Pt barrier on thermal stability of Ti/Al/Pt/Au in ohmic contact with Si-implanted n-type GaN layers

C. T. Lee, H. W. Kao, F. T. Hwang

Department of Photonics

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We report the effect of the Pt barrier on the thermal stability of Ti/Al/Pt/Au in ohmic contact with Si-implanted n-type GaN layers. Ti/Al/Au (25/100/200 nm) and Ti/Al/Pt/Au (25/100/50/200 nm) multilayers were, respectively, deposited on as-implanted and recovered Si-implanted n-type GaN samples. The associated dependence of the specific contact resistance on the annealing time at various temperatures was compared. The long-term ohmic stability of a Ti/Al/Pt/Au multilayer in contact with a Si-implanted n-type GaN layer was much better than that of the Ti/Al/Au multilayer. This superior stability is attributed to the barrier function of the Pt interlayer. The Pt/Au bilayer can also passivate the propensity of oxidation for the conventional Ti/Al bilayer in contact with n-type GaN layers at elevated temperatures.

Original language	English
Pages (from-to)	861-865
Number of pages	5
Journal	Journal of Electronic Materials
Volume	30
Issue number	7
DOIs	https://doi.org/10.1007/s11664-001-0072-5
Publication status	Published - 2001 Jul

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-001-0072-5

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title = "Effect of Pt barrier on thermal stability of Ti/Al/Pt/Au in ohmic contact with Si-implanted n-type GaN layers",

abstract = "We report the effect of the Pt barrier on the thermal stability of Ti/Al/Pt/Au in ohmic contact with Si-implanted n-type GaN layers. Ti/Al/Au (25/100/200 nm) and Ti/Al/Pt/Au (25/100/50/200 nm) multilayers were, respectively, deposited on as-implanted and recovered Si-implanted n-type GaN samples. The associated dependence of the specific contact resistance on the annealing time at various temperatures was compared. The long-term ohmic stability of a Ti/Al/Pt/Au multilayer in contact with a Si-implanted n-type GaN layer was much better than that of the Ti/Al/Au multilayer. This superior stability is attributed to the barrier function of the Pt interlayer. The Pt/Au bilayer can also passivate the propensity of oxidation for the conventional Ti/Al bilayer in contact with n-type GaN layers at elevated temperatures.",

author = "Lee, {C. T.} and Kao, {H. W.} and Hwang, {F. T.}",

note = "Funding Information: This work was supported by the Opto Tech Corporation and the National Science Council of the Republic of China under contract No. NSC-89-2218-E008-033. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.",

year = "2001",

month = jul,

doi = "10.1007/s11664-001-0072-5",

language = "English",

volume = "30",

pages = "861--865",

journal = "Journal of Electronic Materials",

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T1 - Effect of Pt barrier on thermal stability of Ti/Al/Pt/Au in ohmic contact with Si-implanted n-type GaN layers

AU - Lee, C. T.

AU - Kao, H. W.

AU - Hwang, F. T.

N1 - Funding Information: This work was supported by the Opto Tech Corporation and the National Science Council of the Republic of China under contract No. NSC-89-2218-E008-033. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.

PY - 2001/7

Y1 - 2001/7

N2 - We report the effect of the Pt barrier on the thermal stability of Ti/Al/Pt/Au in ohmic contact with Si-implanted n-type GaN layers. Ti/Al/Au (25/100/200 nm) and Ti/Al/Pt/Au (25/100/50/200 nm) multilayers were, respectively, deposited on as-implanted and recovered Si-implanted n-type GaN samples. The associated dependence of the specific contact resistance on the annealing time at various temperatures was compared. The long-term ohmic stability of a Ti/Al/Pt/Au multilayer in contact with a Si-implanted n-type GaN layer was much better than that of the Ti/Al/Au multilayer. This superior stability is attributed to the barrier function of the Pt interlayer. The Pt/Au bilayer can also passivate the propensity of oxidation for the conventional Ti/Al bilayer in contact with n-type GaN layers at elevated temperatures.

AB - We report the effect of the Pt barrier on the thermal stability of Ti/Al/Pt/Au in ohmic contact with Si-implanted n-type GaN layers. Ti/Al/Au (25/100/200 nm) and Ti/Al/Pt/Au (25/100/50/200 nm) multilayers were, respectively, deposited on as-implanted and recovered Si-implanted n-type GaN samples. The associated dependence of the specific contact resistance on the annealing time at various temperatures was compared. The long-term ohmic stability of a Ti/Al/Pt/Au multilayer in contact with a Si-implanted n-type GaN layer was much better than that of the Ti/Al/Au multilayer. This superior stability is attributed to the barrier function of the Pt interlayer. The Pt/Au bilayer can also passivate the propensity of oxidation for the conventional Ti/Al bilayer in contact with n-type GaN layers at elevated temperatures.

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JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

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ER -

Effect of Pt barrier on thermal stability of Ti/Al/Pt/Au in ohmic contact with Si-implanted n-type GaN layers

Abstract

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