Effect of quantum-well structures on the thermoelectric figure of merit in the Si/Si1-xGex system

X. Sun, M. S. Dresselhaus, K. L. Wang, M. O. Tanner

Research output: Contribution to journalConference articlepeer-review

Abstract

The Si/Si1-xGex quantum well system is attractive for high temperature thermoelectric applications and for demonstration of proof-of-principle for enhanced thermoelectric figure of merit Z, since the interfaces and carrier densities can be well controlled in this system. We report theoretical calculations for Z in this system, based on which Si/Si1-xGex quantum-well structures were grown by molecular-beam epitaxy. Thermoelectric and other transport measurements were made, indicating that an increase in Z over bulk values is possible through quantum confinement effects in the Si/Si1-xGex quantum-well structures.

Original languageEnglish
Pages (from-to)261-266
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume452
Publication statusPublished - 1997
EventProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
Duration: 1996 Dec 21996 Dec 6

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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