Effect of quantum-well structures on the thermoelectric figure of merit in the Si/Si1-xGex system

X. Sun; M. S. Dresselhaus; K. L. Wang; M. O. Tanner

Effect of quantum-well structures on the thermoelectric figure of merit in the Si/Si_1-xGe_x system

X. Sun, M. S. Dresselhaus, K. L. Wang, M. O. Tanner

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

The Si/Si_1-xGe_x quantum well system is attractive for high temperature thermoelectric applications and for demonstration of proof-of-principle for enhanced thermoelectric figure of merit Z, since the interfaces and carrier densities can be well controlled in this system. We report theoretical calculations for Z in this system, based on which Si/Si_1-xGe_x quantum-well structures were grown by molecular-beam epitaxy. Thermoelectric and other transport measurements were made, indicating that an increase in Z over bulk values is possible through quantum confinement effects in the Si/Si_1-xGe_x quantum-well structures.

Original language	English
Pages (from-to)	261-266
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	452
Publication status	Published - 1997
Event	Proceedings of the 1996 MRS Fall Meeting - Boston, MA, USA Duration: 1996 Dec 2 → 1996 Dec 6

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "Effect of quantum-well structures on the thermoelectric figure of merit in the Si/Si1-xGex system",

abstract = "The Si/Si1-xGex quantum well system is attractive for high temperature thermoelectric applications and for demonstration of proof-of-principle for enhanced thermoelectric figure of merit Z, since the interfaces and carrier densities can be well controlled in this system. We report theoretical calculations for Z in this system, based on which Si/Si1-xGex quantum-well structures were grown by molecular-beam epitaxy. Thermoelectric and other transport measurements were made, indicating that an increase in Z over bulk values is possible through quantum confinement effects in the Si/Si1-xGex quantum-well structures.",

author = "X. Sun and Dresselhaus, {M. S.} and Wang, {K. L.} and Tanner, {M. O.}",

year = "1997",

language = "English",

volume = "452",

pages = "261--266",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

}

TY - JOUR

T1 - Effect of quantum-well structures on the thermoelectric figure of merit in the Si/Si1-xGex system

AU - Sun, X.

AU - Dresselhaus, M. S.

AU - Wang, K. L.

AU - Tanner, M. O.

PY - 1997

Y1 - 1997

N2 - The Si/Si1-xGex quantum well system is attractive for high temperature thermoelectric applications and for demonstration of proof-of-principle for enhanced thermoelectric figure of merit Z, since the interfaces and carrier densities can be well controlled in this system. We report theoretical calculations for Z in this system, based on which Si/Si1-xGex quantum-well structures were grown by molecular-beam epitaxy. Thermoelectric and other transport measurements were made, indicating that an increase in Z over bulk values is possible through quantum confinement effects in the Si/Si1-xGex quantum-well structures.

AB - The Si/Si1-xGex quantum well system is attractive for high temperature thermoelectric applications and for demonstration of proof-of-principle for enhanced thermoelectric figure of merit Z, since the interfaces and carrier densities can be well controlled in this system. We report theoretical calculations for Z in this system, based on which Si/Si1-xGex quantum-well structures were grown by molecular-beam epitaxy. Thermoelectric and other transport measurements were made, indicating that an increase in Z over bulk values is possible through quantum confinement effects in the Si/Si1-xGex quantum-well structures.

UR - http://www.scopus.com/inward/record.url?scp=0030673042&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030673042&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0030673042

SN - 0272-9172

VL - 452

SP - 261

EP - 266

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1996 MRS Fall Meeting

Y2 - 2 December 1996 through 6 December 1996

ER -

Effect of quantum-well structures on the thermoelectric figure of merit in the Si/Si_1-xGe_x system

Abstract

All Science Journal Classification (ASJC) codes

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