Effect of residual stress on nanoindented property of Si/C/Si multilayers

Bo-Hsiung Wu, Chen Kuei Chung, Ting Ruen Shih, Cheng Chang Peng, Udit Surya Mohanty

Research output: Contribution to journalArticlepeer-review

Abstract

The effect of residual stress on the nanoindentation property of Si/C/Si multilayers has been investigated. Sandwiched Si/C/Si multilayers were deposited on Si(100) substrates by means of ultrahighvacuum ion-beam sputtering at room temperature (RT). Four structures with different Si top-layer thickness of 5, 10, 25, and 50 nm and the constant thickness of C/Si underlayer at 100/50 nm were investigated in this study. The residual stress of the Si/C/Si (5/100/50 nm/nm/nm thick) film was about -17.76 GPa under compression, and its hardness was 20.39 GPa at RT. The compressive residual stress was decreased to -5.54 GPa with the increased thickness of Si toplayer up to 50 nm, and its hardness was reduced to (16.22 GPa at RT. The effect of Si top-layer thickness (5-50 nm) on Si/C/Si residual stress on the nanoindentation property were also discussed. The results showed that the thicker was the Si toplayer, the lower was the residual stress and hardness, which was good for the suppression of the buckling or wrinkling in the C/Si-nanocomposite film.

Original languageEnglish
Article number033030
JournalJournal of Micro/Nanolithography, MEMS, and MOEMS
Volume8
Issue number3
DOIs
Publication statusPublished - 2009 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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