Effect of RF power and substrate temperature on physical properties of Zr0.8Sn0.2TiO4 films by RF magnetron sputtering

Cheng Shing Hsu, Cheng Liang Huang

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1 Citation (Scopus)

Abstract

Physical properties of rf-sputtered crystalline (Zr0.8Sn0.2)TiO4 (ZST) thin films deposited on n-type Si(100) substrates at different rf powers and substrate temperatures have been investigated. The structural and morphological characteristics analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM) were found to be sensitive to deposition conditions, such as rf power from 300 W to 400 W and substrate temperature (400°C, 450°C). Highly oriented ZST (111) and (002) perpendicular to the substrate surface were identified at a rf power of 400 W and a substrate temperature of 450°C. The selected-area diffraction pattern showed that the deposited films exhibited a polycrystalline microstructure. The grain size as well as the deposition rate of the film increased with the increase in both the rf power and the substrate temperature. The leakage current decreased with increasing rf power and substrate temperature. As rf power = 400 W and substrate temperature = 450°C, a leakage current of 7.2 × 10-11 A was obtained at 1 V.

Original languageEnglish
Pages (from-to)6896-6900
Number of pages5
JournalJapanese Journal of Applied Physics
Volume40
Issue number12
DOIs
Publication statusPublished - 2001 Dec

All Science Journal Classification (ASJC) codes

  • General Engineering
  • General Physics and Astronomy

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