Effect of RF power on physical properties of MgTiO₃ films by RF magnetron sputtering

Physical properties of rf-sputtered crystalline MgTiO₃ thin films deposited on n-type Si(100) substrates at different rf powers have been investigated. These films were fabricated at 400°C by choosing different RF powers (from 100 to 400 W) at a substrate temperature of 400°C which is much lower than the bulk sintering temperature. X-ray diffraction (XRD) analysis showed that the deposited films exhibited a polycrystalline microstructure. The grain size of the films increased with increasing RF power. The electrical properties were measured using C-V and I-V measurements on metal-insulator- semiconductor (MIS) capacitor structures. At an RF power of 400 W and a substrate temperature of 400°C, a dielectric constant of 16.2 (f = 10 MHz), a leakage current density of 2.03 × 10^-9 A/mm² and a dissipation factor of 0.041 were obtained.