Effect of r.f. sputtering parameters on ZnO films deposited onto GaAs substrates

C. T. Lee, Y. K. Su, H. M. Wang

Research output: Contribution to journalArticlepeer-review

44 Citations (Scopus)


In order to compensate the piezoelectrical property of GaAs-based material for monolithic integrated acousto-optic circuit applications, a ZnO film with a highly preferred orientation should be deposited. R.f. sputtering was employed to deposit ZnO films with various technological parameters. The optimal conditions to deposit high quality ZnO film onto GaAs-based substrates were deduced and investigated. Low loss surface acoustic wave devices fabricated on ZnO/GaAs wafers were obtained. The total insertion loss measured at a centre frequency of 25.37 MHz was 20 dB.

Original languageEnglish
Pages (from-to)283-289
Number of pages7
JournalThin Solid Films
Issue number2-3
Publication statusPublished - 1987 Jul 6

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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