Abstract
In order to compensate the piezoelectrical property of GaAs-based material for monolithic integrated acousto-optic circuit applications, a ZnO film with a highly preferred orientation should be deposited. R.f. sputtering was employed to deposit ZnO films with various technological parameters. The optimal conditions to deposit high quality ZnO film onto GaAs-based substrates were deduced and investigated. Low loss surface acoustic wave devices fabricated on ZnO/GaAs wafers were obtained. The total insertion loss measured at a centre frequency of 25.37 MHz was 20 dB.
Original language | English |
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Pages (from-to) | 283-289 |
Number of pages | 7 |
Journal | Thin Solid Films |
Volume | 150 |
Issue number | 2-3 |
DOIs | |
Publication status | Published - 1987 Jul 6 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry