Effect of rinsing temperature on electrical characteristics of ZnO TFTs built using successive ionic layer adsorption and reaction

P. Y. Lee, S. P. Chang, H. H. Lin, S. J. Chang

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this study, the effects of ethylene glycol treatment temperature on the transfer characteristics of ZnO thin film transistors (TFTs), constructed using successive ionic layer adsorption and reaction (SILAR), were investigated. Under hightemperature solution treatments, the TFT device demonstrated the typical positive shift in threshold voltage (ΔVth). The shifting phenomenon results from lower oxygen vacancies attributable to Zn(OH)2 in the films following a rise in the treatment temperature. However, at temperatures higher than 145°C, particle mobility tends be significantly reduced due to the shedding of ZnO from the surface. As a result, the influence of treatment temperature on SILAR is an essential topic of study.

Original languageEnglish
Pages (from-to)133-138
Number of pages6
JournalJournal of Optoelectronics and Advanced Materials
Volume17
Issue number1-2
Publication statusPublished - 2015 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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